B. N. Kurdi

IBM Research - Almaden — United States

Engineering · Physical Sciences

18h-index3.1kcitations35works0.02yr avg
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Research Topics

Advanced Memory and Neural Computing(18), Semiconductor materials and devices(17), Photonic and Optical Devices(8), Ferroelectric and Negative Capacitance Devices(8), Semiconductor Lasers and Optical Devices(6)

Publications35 total

Circuit-Level Benchmarking of Access Devices for Resistive Nonvolatile Memory Arrays
IEEE Journal on Emerging and Selected Topics in Circuits and Systems·2016· 18 cited
Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element
IEEE Transactions on Electron Devices·2015· 905 citedOpen Access
Exploring the Design Space for Crossbar Arrays Built With Mixed-Ionic-Electronic-Conduction (MIEC) Access Devices
IEEE Journal of the Electron Devices Society·2015· 25 citedOpen Access
On the Origin of Steep $I$ –$V$ Nonlinearity in Mixed-Ionic-Electronic-Conduction-Based Access Devices
IEEE Transactions on Electron Devices·2015· 8 cited
Mixed-Ionic-Electronic-Conduction (MIEC)-Based Access Devices for 3D Multilayer Crosspoint Memory
MRS Proceedings·2015
Experimental demonstration and tolerancing of a large-scale neural network (165,000 synapses), using phase-change memory as the synaptic weight element
2014· 203 cited
Circuit-level benchmarking of access devices for resistive nonvolatile memory arrays
2014· 12 cited
MIEC (mixed-ionic-electronic-conduction)-based access devices for non-volatile crossbar memory arrays
Semiconductor Science and Technology·2014· 54 cited
Access devices for 3D crosspoint memory
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena·2014· 352 citedOpen Access
The origin of massive nonlinearity in Mixed-Ionic-Electronic-Conduction (MIEC)-based Access Devices, as revealed by numerical device simulation
2014· 4 cited
Exploring the design space for resistive nonvolatile memory crossbar arrays with mixed ionic-electronic-conduction (MIEC)-based Access Devices
2014· 5 cited
Recovery dynamics and fast (sub-50ns) read operation with Access Devices for 3D crosspoint memory based on mixed-ionic-electronic-conduction (MIEC)
Symposium on VLSI Technology·2013· 20 cited
Nanoscale electronic synapses using phase change devices
ACM Journal on Emerging Technologies in Computing Systems·2013· 162 cited
Sub-30nm scaling and high-speed operation of fully-confined Access-Devices for 3D crosspoint memory based on mixed-ionic-electronic-conduction (MIEC) materials
2012· 63 cited
Large-scale (512kbit) integration of multilayer-ready access-devices based on mixed-ionic-electronic-conduction (MIEC) at 100% yield
2012· 71 cited
Voltage polarity effects in Ge2Sb2Te5-based phase change memory devices
Journal of Applied Physics·2011· 66 cited
Endurance and scaling trends of novel access-devices for multi-layer crosspoint-memory based on mixed-ionic-electronic-conduction (MIEC) materials
Symposium on VLSI Technology·2011· 32 cited
Voltage polarity effects in GST-based phase change memory: Physical origins and implications
2010· 25 cited
Highly-scalable novel access device based on Mixed Ionic Electronic conduction (MIEC) materials for high density phase change memory (PCM) arrays
2010· 120 cited
Overview of candidate device technologies for storage-class memory
IBM Journal of Research and Development·2008· 671 cited
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Frequent Co-authors

Geoffrey W. Burr(21), Rohit S. Shenoy(21), Kumar Virwani(18), Pritish Narayanan(11), R. M. Shelby(10), G. Kalpana(10), Charles Rettner(10), A. J. Kellock(8), Bryan L. Jackson(7), Kailash Gopalakrishnan(7), Teya Topuria(7), Philip M. Rice(7), A. Padilla(7), Alvaro Padilla(6), Donald S. Bethune(6), R. S. King(6), M. Jurich(6), Khanh Nguyen(5), A. N. Bowers(5), Dennis G. Hall(5)