R.J. Bassett

Engineering · Physical Sciences

5h-index188citations25works0.02yr avg
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Research Topics

Silicon Carbide Semiconductor Technologies(7), Advancements in Semiconductor Devices and Circuit Design(7), Advanced DC-DC Converters(6), Silicon and Solar Cell Technologies(6), Semiconductor materials and interfaces(4)

Publications25 total

Advanced Power Converter for Universal and Flexible Power Management in Future Electricity Network
VBN Forskningsportal (Aalborg Universitet)·2007· 19 citedOpen Access
4.5 kV-8 A SiC-Schottky Diodes / Si-IGBT Modules
Materials science forum·2006· 1 cited
4.5 kV-8 A SiC-Schottky Diodes / Si-IGBT Modules
Materials science forum·2006Open Access
The Next Generation of Power Electronics in Transmission and Distribution Applications
2006 12th International Power Electronics and Motion Control Conference·2006· 1 cited
The Next Generation of Power Electronics in Transmission and Distribution Applications
2006 12th International Power Electronics and Motion Control Conference·2006
Future T&D Technology
2006 12th International Power Electronics and Motion Control Conference·2006· 13 cited
Future T&D Technology
2006 12th International Power Electronics and Motion Control Conference·2006
Editorial: Recent advances in power semiconductor devices
IEE Proceedings - Circuits Devices and Systems·2001· 1 cited
Semiconductor Devices
Elsevier eBooks·1993· 3 cited
Optimising the design of high power semiconductor packaging for integrated power devices
1991
A high power, high frequency DC/DC converter using selected GTOS
1990
The practical application limits of very high power GTOs and very high power bipolar transistors
Power Electronics and Variable-Speed Drives, Third International Conference on·1988
Editorial. Power semiconductor devices
IEE Proceedings I Solid State and Electron Devices·1985
Evaluation of the SCR controller noise problem
1981Open Access
Analysis of beams from a dynamitron accelerator with a view to modification for high precision electron and positive ion operation
Revue de Physique Appliquée·1977Open Access
Investigation of ESLR effects in the OCVD measurement used for minority carrier lifetime determination in high power silicon diodes
International Journal of Electronics·1975
Determination of the bulk carrier lifetime in the low-doped region of a silicon power diode, by the method of open circuit voltage decay†
International Journal of Electronics·1973· 27 cited
Thermally-stimulated current from the gold acceptor trapping level in silicon†
International Journal of Electronics·1972· 2 cited
An investigation into the mode of switching of inverse gate thyristors†
International Journal of Electronics·1971· 5 cited
On membrane diffusion with near-equilibrium reaction
Chemical Engineering Science·1970· 77 citedOpen Access
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Frequent Co-authors

C. A. Hogarth(5), Colin Oates(2), T. Mulvey(2), Will Crookes(2), Adrian Lancaster(2), Georges Tchouangue(2), N. Yamano(2), Dominique Tournier(2), P. Waind(2), Philippe Godignon(2), L. Coulbeck(2), José del R. Millán(2), Joe Goddard(1), Jerome S. Schultz(1), W. EULOP(1), Florin Iov(1), Frede Blaabjerg(1), John Clare(1), Alfred Rufer(1), S. Savio(1)