Robert C. Keller

Texas Instruments (United States) — United States

Engineering · Physical Sciences

13h-index663citations49works0.02yr avg
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Research Topics

Semiconductor materials and devices(15), Advanced Semiconductor Detectors and Materials(8), Semiconductor Quantum Structures and Devices(7), Photonic and Optical Devices(7), Advancements in Semiconductor Devices and Circuit Design(7)

Publications49 total

Heterogenous Integration Enables FPGA Based Hardware Acceleration for RF Applications
2022· 1 cited
Forschungsförderung durch die Schweizerische Herzstiftung
Cardiovascular Medicine·2018Open Access
„Früh übt sich….“ – Wiederbelebungskurse in Schulen
Schweizerische Ärztezeitung·2018Open Access
A 14-bit 8.9GS/s RF DAC in 40nm CMOS achieving >71dBc LTE ACPR at 2.9GHz
2016· 26 cited
AFM cantilever vibration detection with a transmitted electron beam
Bulletin of the American Physical Society·2016
Compact hybrid-integrated 400 Gbit/s WDM receiver for short-reach optical interconnect in datacenters
2014· 9 cited
DWDM Hybrid-Integrated TOSA and ROSA for 10$\,\times\,$10.7-Gb/s Transmission Over 75-km Links
IEEE Photonics Technology Letters·2012· 10 cited
Compact Hybridly Integrated 10$\,\times\,$11.1-Gb/s DWDM Optical Receiver
IEEE Photonics Technology Letters·2012· 4 cited
Modeling the lifetime of a lateral DMOS transistor in repetitive clamping mode
2010· 12 cited
Interleaver Using an Arrayed-Waveguide Grating-Lens-Grating Configuration for Spectrally Efficient Systems
IEEE Photonics Technology Letters·2009· 3 cited
MEMS thermal imager with optical readout
Sensors and Actuators A Physical·2009· 27 cited
3 ω thermal conductivity measurements of thin film dielectrics on silicon for use in cantilever-based IR imaging
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·2009· 2 cited
Open questions in electronic sputtering of solids by slow highly charged ions with respect to applications in single ion implantation
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·2004Open Access
Wavelength-selective 1×4 switch for 128 WDM channels at 50 GHz spacing
2003· 57 cited
Optical MEMS devices for telecom systems
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2003· 12 cited
Gate quality doped high K films for CMOS beyond 100 nm: 3-10 nm Al/sub 2/O/sub 3/ with low leakage and low interface states
2002· 42 cited
50 nm Vertical Replacement-Gate (VRG) pMOSFETs
2002· 15 cited
Single mask metal-insulator-metal (MIM) capacitor with copper damascene metallization for sub-0.18 μm mixed mode signal and system-on-a-chip (SoC) applications
2002· 10 cited
NBTI enhancement by nitrogen incorporation into ultrathin gate oxide for 0.10-μm gate CMOS generation
2002· 139 cited
50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO2 and Al2O3 gate dielectrics
2001· 19 cited
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Frequent Co-authors

F. Klemens(11), J.F. Miner(8), W Mansfield(8), M. Seelmann‐Eggebert(8), F. Pardo(7), E. Ferry(7), Cristian Bolle(6), J. E. Bower(6), A. Kornblit(6), N.R. Basavanhally(5), Y.L. Low(5), M.D. Morris(5), T. Sorsch(5), H. J. Richter(5), M. R. Baker(5), C. R. Helms(5), David T. Neilson(4), Sang‐Hyun Oh(4), C. S. Pai(4), Gary R. Weber(4)