W. Vandervorst

Engineering · Physical Sciences

24h-index1.8kcitations129works0.02yr avg
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Research Topics

Semiconductor materials and devices(63), Integrated Circuits and Semiconductor Failure Analysis(57), Ion-surface interactions and analysis(35), Silicon and Solar Cell Technologies(30), Force Microscopy Techniques and Applications(18)

Publications129 total

Post-field ionization of Si clusters in atom probe tomography: A joint theoretical and experimental study
arXiv (Cornell University)·2022Open Access
Ge:B and GeSn:B Low Temperature Selective Epitaxial Growth Schemes for Source/Drain layers in Ge pMOS devices
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials·2018
Compositional analysis of InGaAs fins using Rutherford backscattering spectrometry
Max Planck Digital Library·2018
Compositional analysis on ensemble of InGaAs fins using TEM and Rutherford backscattering spectrometry
MPG.PuRe (Max Planck Society)·2017
Sub-10 nm low current resistive switching behavior in hafnium oxide stack
Applied Physics Letters·2016· 34 cited
Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
Nanoscale·2016· 50 cited
Outwitting the series resistance in scanning spreading resistance microscopy
Ultramicroscopy·2015· 15 cited
Surface contamination and electrical damage by focused ion beam: conditions applicable to the extraction of TEM lamellae from nanoelectronic devices
Semiconductor Science and Technology·2015· 9 cited
Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition
Thin Solid Films·2015· 12 cited
Scanning spreading resistance microscopy for electrical characterization of diamond interfacial layers
physica status solidi (a)·2015· 6 cited
Nucleation Behavior of III/V Crystal Selectively Grown Inside Nano-Scale Trenches: The Influence of Trench Width
ECS Journal of Solid State Science and Technology·2015· 3 cited
G‐SIMS analysis of organic solar cell materials
Surface and Interface Analysis·2014
Calibration of PIXE yields using binary thin films on Si
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·2014· 2 citedOpen Access
Growth rate for the selective epitaxial growth of III–V compounds inside submicron shallow-trench-isolation trenches on Si (001) substrates by MOVPE: Modeling and experiments
Journal of Crystal Growth·2014· 5 cited
Evolution of (001) and (111) facets for selective epitaxial growth inside submicron trenches
Journal of Applied Physics·2014· 13 citedOpen Access
3D dopant analysis in nano scale devices (FinFETs) by Atom Probe Tomography
2013
(Invited) Optimization of WAl<sub>2</sub>O<sub>3</sub>Cu(-Te) Material Stack for High-Performance Conductive-Bridging Memory Cells
ECS Transactions·2013· 1 cited
Direct Imaging of 3D Atomic-Scale Dopant-Defect Clustering Processes in Ion-Implanted Silicon
Nano Letters·2013· 25 cited
Optimal laser positioning for laser-assisted atom probe tomography
Ultramicroscopy·2013· 6 cited
Diameter-dependent boron diffusion in silicon nanowire-based transistors
Applied Physics Letters·2013· 15 cited
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Frequent Co-authors

Trudo Clarysse(13), Pierre Eyben(10), H. Bender(9), Roger Loo(7), Thomas Hantschel(6), Matty Caymax(6), Olivier Richard(5), Marc Meuris(5), L. Hellemans(4), Bert Brijs(4), Tom Janssens(4), B. J. Pawlak(4), Andreas Schulze(4), Peter Wolf(3), J. Snauwaert(3), R. Surdeanu(3), Richard Lindsay(3), A. Satta(3), Ray Duffy(3), Susan B. Felch(3)