Wan Shun Zhao

Chinese Academy of Sciences — China

Engineering · Physical Sciences

5h-index88citations17works0.02yr avg
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Research Topics

Silicon Carbide Semiconductor Technologies(14), Semiconductor materials and devices(8), Copper Interconnects and Reliability(6), Advanced ceramic materials synthesis(3), Thin-Film Transistor Technologies(3)

Publications17 total

Effect of C/Si ratio on growth of 4H-SiC epitaxial layers on on-axis and 4° off-axis substrates
Journal of Crystal Growth·2019· 13 cited
Defect appearance on 4H-SiC homoepitaxial layers via molten KOH etching
Journal of Crystal Growth·2019· 12 cited
Homoepitaxial Growth on Si-Face (0001) On-Axis 4H-SiC Substrates
Materials science forum·2019
Theoretical Calculation and Simulation for Microcantilevers Based on SiC Epitaxial Layers
Materials science forum·2019· 1 cited
Growth, structure, spectral and laser properties of Yb<sup>3+</sup>:LaMgB<sub>5</sub>O<sub>10</sub>– a new laser material
CrystEngComm·2015· 23 cited
Structure and Origin of Carrot Defects on 4H-SiC Homoepitaxial Layers
Materials science forum·2014· 12 cited
10 × 100 mm 4H-SiC Epitaxial Growth by Warm-Wall Planetary Reactor
Materials science forum·2013· 2 cited
Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-SiC
Materials science forum·2012· 2 cited
&lt;i&gt;In Situ&lt;/i&gt; Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD
Materials science forum·2008· 6 cited
Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer
Materials science forum·2008· 3 cited
Micro-Raman Investigation of Defects in a 4H-SiC Homoepilayer
Materials science forum·2007· 2 cited
Homoepitaxial Growth of 4H-SiC Multi-Epilayers and its Application to UV Detection
Materials science forum·2007· 1 citedOpen Access
Heavily Doped Polycrystalline 3C-SiC Growth on SiO&lt;sub&gt;2&lt;/sub&gt;/Si (100) Substrates for Resonator Applications
Materials science forum·2007Open Access
Homoepitaxial Growth of 4H-SiC Multi-Epilayers and its Application to UV Detection
Materials science forum·2007· 1 cited
Heavily Doped Polycrystalline 3C-SiC Growth on SiO&lt;sub&gt;2&lt;/sub&gt;/Si (100) Substrates for Resonator Applications
Materials science forum·2007· 5 cited
Micro-Raman Investigation of Defects in a 4H-SiC Homoepilayer
Materials science forum·2007Open Access
Vertical PIN ultraviolet photodetectors based on 4H‐SiC homoepilayers
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2007· 5 cited

Frequent Co-authors

Guo Sheng Sun(13), Xing Fang Liu(11), Yong Zhao(8), Yan Guo(7), Yi Zeng(5), Jin Min Li(5), Feng Zhang(4), Lei Wang(4), Li Wang(3), Lin Dong(3), Ning Jin(3), Jia Ye Li(3), Lei Wang(3), J.Y. Li(3), Yuan He(2), Zhanwei Shen(2), Ying Cui(2), X.F. Liu(2), G.S. Sun(2), Jun Yu(2)