Stephan Lutgen

Physics and Astronomy · Physical Sciences

18h-index1.6kcitations46works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(31), Semiconductor Quantum Structures and Devices(29), Semiconductor Lasers and Optical Devices(22), Semiconductor materials and devices(7), Spectroscopy and Laser Applications(7)

Publications46 total

Magnetoresistance of AlGaN/GaN High Electron Mobility Transistors on Silicon
Materials science forum·2014· 1 cited
Excellent uniformity on large diameter GaN on silicon LED wafer
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2014· 8 cited
GaN‐on‐Si wafers for HEMTs with high power‐driving capability
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2014· 5 cited
Highly Uniform Electroluminescence from 150 and 200 mm GaN-on-Si-Based Blue Light-Emitting Diode Wafers
Applied Physics Express·2013· 8 cited
200-mm GaN-on-Si Based Blue Light-Emitting Diode Wafer with High Emission Uniformity
Japanese Journal of Applied Physics·2013· 12 cited
Impact of AlN Spacer on Electron Mobility of AlGaN/AlN/GaN Structures on Silicon
Materials science forum·2013· 5 cited
2D-composition mapping in InGaN without electron beam induced clustering of indium by STEM HAADF Z-contrast imaging
Journal of Physics Conference Series·2011· 5 citedOpen Access
47.3: <i>Invited Paper</i> : Recent Progress in Direct Green Lasers for Mobile Image Projectors
SID Symposium Digest of Technical Papers·2011· 2 cited
Investigation of long wavelength green InGaN lasers on <i>c</i>‐plane GaN up to 529 nm continuous wave operation
physica status solidi (a)·2011· 22 cited
Composition mapping in InGaN by scanning transmission electron microscopy
Ultramicroscopy·2011· 171 cited
Back Cover: Interdependency of surface morphology and wavelength fluctuations of indium‐rich InGaN/GaN quantum wells (Phys. Status Solidi A 5/2011)
physica status solidi (a)·2011· 3 cited
Contents: (Phys. Status Solidi 5 4/2011)
physica status solidi (a)·2011Open Access
Recent results of blue and green InGaN laser diodes for laser projection
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2011· 42 cited
Interdependency of surface morphology and wavelength fluctuations of indium‐rich InGaN/GaN quantum wells
physica status solidi (a)·2011· 11 cited
Pros and cons of green InGaN laser on <i>c</i>‐plane GaN
physica status solidi (b)·2010· 50 cited
True Green Laser Diodes at 524 nm with 50 mW Continuous Wave Output Power on<i>c</i>-Plane GaN
Applied Physics Express·2010· 140 cited
True green InGaN laser diodes
physica status solidi (a)·2010· 50 cited
Waveguide design of green InGaN laser diodes
physica status solidi (a)·2010· 55 cited
Progress of blue and green InGaN laser diodes
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2009· 26 cited
InGaN laser diodes with 50 mW output power emitting at 515 nm
Applied Physics Letters·2009· 120 cited
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Frequent Co-authors

Uwe Strauß(21), Adrian Avramescu(18), Teresa Lermer(12), Jens Müller(12), Desirée Queren(10), G. Brüderl(9), Marc Schillgalies(9), Christoph Eichler(8), T. Albrecht(8), Sönke Tautz(7), P. Brick(7), J. Luft(7), Ines Pietzonka(6), Lars Groh(6), Andreas Breidenassel(5), Robert A. Kaindl(5), M. Woerner(5), Andreas Hase(5), Ulrich T. Schwarz(5), S. Murad(5)