N. Shimada

Osaka University — Japan

Engineering · Physical Sciences

5h-index94citations20works4.02yr avg
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Research Topics

Photonic and Optical Devices(15), Semiconductor Lasers and Optical Devices(15), Semiconductor Quantum Structures and Devices(9), Solid State Laser Technologies(5), Optical Network Technologies(2)

Publications20 total

KLF2 expression in IgG plasma cells at their induction site regulates the migration program
The Journal of Experimental Medicine·2025· 4 citedOpen Access
High-Power 625-nm AlGaInP Laser Diode
IEEE Journal of Selected Topics in Quantum Electronics·2011· 12 cited
High-Power Tapered Unstable-Resonator Laser Diode With a Fiber-Bragg-Grating Reflector
IEEE Photonics Technology Letters·2009· 11 cited
InGaAs angled-grating distributed bragg reflector lasers integrated with grating outcoupler for collimation
IEEE Journal of Selected Topics in Quantum Electronics·2003· 2 cited
InGaAs angled-grating distributed Bragg reflector lasers integrated with grating outcoupler for collimation
2003
High temperature and reliable operation of 630 nm-band InGaAlP tensile-strained multiquantum-well laser diodes
2002· 2 cited
40 mW, 100°C maximum temperature operation of 655-nm band InGaP/InGaAlP strained multiple-quantum-well laser diodes
2002
InGaAlP Zn-diffused window structure laser diodes fabricated by using highly Zn-doped GaAs layers
2002· 1 cited
Selective disordering of InGaAs strained quantum well by rapid thermal annealing with SiO/sub 2/ caps of different thicknesses for photonic integration
2002
Tunable external-cavity semiconductor laser using monolithically integrated tapered amplifier and grating coupler for collimating
2002
Tunable External-Cavity Quantum-Well Laser Using Grating Coupler Integrated in Selectively Disordered Waveguide
IEICE Transactions on Electronics·2002
Monolithic integration of laser and passive elements using selective QW disordering by RTA with SiO/sub 2/ caps of different thicknesses
IEEE Journal of Selected Topics in Quantum Electronics·2001· 27 cited
Tunable external-cavity semiconductor laser using monolithically integrated tapered amplifier and grating coupler for collimation
IEEE Photonics Technology Letters·2000· 5 cited
40-mW 100°C maximum temperature operation of 655-nm band InGaP-InGaAlP strained multiple-quantum-well laser diodes
IEEE Journal of Selected Topics in Quantum Electronics·1999
High-temperature operation (70°C, 50 mW) of 660-nm-band InGaAlP Zn-diffused window lasers fabricated using highly Zn-doped GaAs layers
IEEE Journal of Selected Topics in Quantum Electronics·1999· 8 cited
Optimum tensile-strained multiquantum-well structure of 630-nm band InGaAlP lasers for high temperature and reliable operation
IEEE Journal of Selected Topics in Quantum Electronics·1995· 15 cited
Investigation of tensile-strained InGaAlP multiquantum-well active regions by photoluminescence measurements
Journal of Applied Physics·1994· 4 cited
40mW Operation Of InGaalP Visible-light Laser Diodes
1993· 1 cited
Highly reliable 100 mW operation of broad area InGaAlp visible light laser diode
Electronics Letters·1991· 2 cited
Mode Properties of MOCVD Grown High Power GaAlAs Lasers
1985

Frequent Co-authors

Toshiaki Suhara(7), Minoru Watanabe(7), H. Okuda(7), Masahiro Uemukai(6), Anders Larsson(5), Yutaka Fukumoto(4), O. Horiuchi(4), Morihito Okada(4), Atsushi Tanaka(4), K. Gen-ei(4), Kenichi Fukuoka(4), Hiroshi Nishihara(3), H. Matsuura(3), Y. Itoh(3), K. Yutani(3), T. Yagi(2), Y. Kunoh(2), M. Okajima(2), H. Uemukai(1), Akihito Ohno(1)