Shinji Ohkawa

Osaka College of Social Health and Welfare — Japan

Engineering · Physical Sciences

11h-index366citations24works0.02yr avg
OpenAlex↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Semiconductor materials and devices(7), Electron and X-Ray Spectroscopy Techniques(7), X-ray Spectroscopy and Fluorescence Analysis(6), Semiconductor materials and interfaces(6), Silicon and Solar Cell Technologies(4)

Publications24 total

Students Ability and Learning Method for Understanding Patients’ Needs in Medical Interviews
Rigakuryoho Kagaku·2015Open Access
Study of the Relationship between Sticky Human Serum IgA1 and Its O-Glycan Glycoform
Biochemical and Biophysical Research Communications·1999· 24 cited
Erythrocyte Aggregation Enhanced by Hydrostatic Pressure.
The Review of High Pressure Science and Technology·1999· 2 citedOpen Access
Spurious Peaks in Total Reflection X-Ray Fluorescence Analysis
Analytical Sciences·1995· 13 cited
Trace Analysis of a Beryllium Window for a Solid State Detector System by Inductively Coupled Plasma Mass Spectrometry
Analytical Sciences·1994· 7 cited
Origins of Spurious Peaks of Total Reflection X-Ray Fluorescence Analysis of Si Wafers Excited by Monochromatic X-Ray Beam W-Lβ
Japanese Journal of Applied Physics·1994· 10 cited
Influence of Standing Waves on Impurity Analysis of Si(001) Wafer Using Commercially Available Total-Reflection X-Ray Fluorescence Analyzer
Japanese Journal of Applied Physics·1993· 7 cited
Main Peak Profiles of Total Reflection X-Ray Fluorescence Analysis of Si(001) Wafers Excited by Monochromatic X-Ray Beam W-Lβ (II)
Japanese Journal of Applied Physics·1993· 20 cited
Main Peak Profiles of Total Reflection X-Ray Fluorescence Analysis of Si(001) Wafers Excited by Monochromatic X-Ray Beam W-Lβ (I)
Japanese Journal of Applied Physics·1992· 13 cited
Synthesis of 3,3-difluoro-2-azetidinones and 2,3-dideoxy-2,2-difluoro-3-amino-sugars through the reformatsky reaction of difluoroacetate with imine
Tetrahedron Letters·1988· 113 cited
Growth kinetics of amorphous and microcrystalline silicon studied by using radical beam
Journal of Non-Crystalline Solids·1985· 5 cited
Current Limitation Induced by Infrared Light in n-Type GaAs Thin Layers on Semi-Insulating Cr-Doped GaAs
Japanese Journal of Applied Physics·1982· 10 cited
Substrate Bias Effect on Ion-Implanted GaAs MESFETs
Japanese Journal of Applied Physics·1980· 8 cited
Effects of the growth conditions on the incorporation of deep levels in vapor-grown GaAs
Journal of Applied Physics·1979· 24 cited
Thermal Oxidation of Arsenic‐Diffused Silicon
Journal of The Electrochemical Society·1978· 11 cited
Growth of Iron‐Doped Epitaxial Layers for GaAs Field Effect Transistors
Journal of The Electrochemical Society·1977· 15 cited
Submicron GaAs Epitaxial Layer from Diethylgalliumchloride and Arsine
Journal of The Electrochemical Society·1976· 13 cited
Atmosphere Effect on Migration of Co and Si in Au-Go-Si System
Japanese Journal of Applied Physics·1975· 4 cited
Effects of the Heating Rate in Alloying of An-Ge to<i>n</i>-Type GaAs on the Ohmic Properties
Japanese Journal of Applied Physics·1975· 27 cited
Arsenic Diffusion into Silicon from Elemental Source
Japanese Journal of Applied Physics·1975· 12 cited
page 1 of 2Next →

Frequent Co-authors

Kenji Yakushiji(6), Atsushi Yoshinaga(6), Yoshio Nakajima(6), Akihiro Shibatomi(4), Hajime Ishikawa(3), Y. Fukukawa(3), Kenya Nakai(3), Kuninori Kitahara(3), Jimpei Harada(3), J. Harada(2), Takeo Taguchi(1), Osamu Kitagawa(1), Yoshimitsu Suda(1), Akihiro Hashimoto(1), Y. IITAKA(1), Yoshihiro Kobayashi(1), Naoki Yokoyama(1), Hitoo Iwase(1), Ikuko Ishii‐Karakasa(1), Yoshiyuki Hiki(1)