Kyungsun Ryu

Georgia Institute of Technology — United States

Engineering · Physical Sciences

11h-index308citations22works0.02yr avg
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Research Topics

Silicon and Solar Cell Technologies(19), Thin-Film Transistor Technologies(10), Integrated Circuits and Semiconductor Failure Analysis(9), Advancements in Semiconductor Devices and Circuit Design(5), Silicon Nanostructures and Photoluminescence(5)

Publications22 total

Fabrication of Spray-Coated Semitransparent Organic Solar Cells
IEEE Journal of the Electron Devices Society·2019· 20 citedOpen Access
High efficiency screen-printed n-type silicon solar cell using co-diffusion of APCVD boron emitter and POCl3 back surface field
Current Applied Physics·2017· 13 citedOpen Access
Mass production of low-cost screen-printed bifacial N-type Si solar cells with BBr<inf>3</inf>-diffused front emitter and ion-implanted back surface field
2016· 2 cited
Process development and comparison of various boron emitter technologies for high-efficiency (~21%) n-type silicon solar cells
Progress in Photovoltaics Research and Applications·2016· 11 cited
Study of degradation in bulk lifetime of n-type silicon wafer due to oxidation of boron-rich layer
Current Applied Physics·2016· 14 cited
Fundamental understanding, impact, and removal of boron-rich layer on n-type silicon solar cells
Solar Energy Materials and Solar Cells·2015· 14 cited
High Implied Voc (>715 mV) and low emitter saturation current density (∼10fA/cm2) from a lightly B doped implanted emitter
2015· 1 cited
Comparison of POCl<inf>3</inf> diffusion with phosphorus ion implantation for Czochralski and Quasi-mono silicon solar cells
2014· 7 cited
High efficiency large area <i>n</i>-type front junction silicon solar cells with boron emitter formed by screen printing technology
Progress in Photovoltaics Research and Applications·2014· 18 cited
Corrigendum to “Ion-implanted and screen-printed large area 20% efficient N-type front junction Si solar cells” [Sol. Energy Mater. Sol. Cells 123 (2014) 92–96]
Solar Energy Materials and Solar Cells·2014
Ion-implanted and screen-printed large area 20% efficient N-type front junction Si solar cells
Solar Energy Materials and Solar Cells·2014· 42 cited
Study of lifetime degradation in n-type silicon due to oxidation of boron-rich layer
2013
N-type Silicon Solar Cell Based on Passivation Layer Grown by Rapid Thermal Oxidation
Journal of the Korean Institute of Electrical and Electronic Material Engineers·2013Open Access
Chemical etching of boron-rich layer and its impact on high efficiency n-type silicon solar cells
Applied Physics Letters·2012· 47 cited
High efficiency n-type solar cells with screen-printed boron emitters and ion-implanted back surface field
2012· 7 cited
High-Efficiency n-Type Si Solar Cells With Novel Inkjet-Printed Boron Emitters
IEEE Electron Device Letters·2012· 14 cited
20% Efficient Screen-Printed n-Type Solar Cells Using a Spin-On Source and Thermal Oxide/Silicon Nitride Passivation
IEEE Journal of Photovoltaics·2011· 33 cited
20% Efficient screen-printed n-type solar cells using a spin-on source and thermal oxide/silicon nitride passivation
2011· 7 cited
High efficiency n-type silicon solar cell with a novel inkjet-printed boron emitter
2011· 2 cited
Optimization of SiN AR coating for Si solar cells and modules through quantitative assessment of optical and efficiency loss mechanism
Progress in Photovoltaics Research and Applications·2011· 45 citedOpen Access
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Frequent Co-authors

A. Rohatgi(17), Young‐Woo Ok(14), Ajay Upadhyaya(10), Moon Hee Kang(5), Chel‐Jong Choi(4), Arnab Das(4), Vijaykumar Upadhyaya(3), Lea Metin(3), Helen Xu(3), Yuguo Tao(2), Francesco Zimbardi(2), A. Bhanap(2), Eunhwan Cho(2), Sung‐Jin Kim(2), Brian Rounsaville(2), Hyun-Jin Song(1), Dong Kyo Heo(1), Da Hyun Kim(1), Minsu Lee(1), Yong Hyun Kim(1)