V. Higgs

Engineering · Physical Sciences

16h-index732citations53works0.02yr avg
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Research Topics

Silicon and Solar Cell Technologies(39), Semiconductor materials and interfaces(21), Silicon Nanostructures and Photoluminescence(19), Integrated Circuits and Semiconductor Failure Analysis(18), Thin-Film Transistor Technologies(17)

Publications53 total

Non-destructive optical methods for assessing defects in production of Si or SiGe materials
The European Physical Journal Applied Physics·2004· 1 cited
Impact of virtual substrate growth on high performance strained Si/SiGe double quantum well metal-oxide-semiconductor field-effect transistors
Journal of Applied Physics·2003· 16 cited
Photoluminescence Study of Interfacial Defects in Direct-Bonded Silicon Wafers
Journal of The Electrochemical Society·2003· 5 cited
Photoluminescence characterization of defects in Si and SiGe structures
Journal of Physics Condensed Matter·2000· 23 cited
Analysis and Suppression of Process-Induced Defects in Memory Devices.
MRS Proceedings·2000· 2 cited
Gettering Strength Assessment Based on Lifetime Measurements
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena·1999· 2 cited
Application of Room Temperature Photoluminescence for the Characterization of Impurities and Defects in Silicon (Invited paper)
SPIE eBooks·1999
Characterization of Si, SiGe and SOI Structures Using Photoluminescence
MRS Proceedings·1999· 2 cited
Scanning Photoluminescence for Wafer Characterization
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena·1998· 9 cited
Measurement, modelling and simulation of defects in as-grown Czochralski silicon
Journal of Crystal Growth·1997· 16 cited
Non-Destructive Techniques for Identification and Control of Processing Induced Extended Defects in Silicon and Correlation with Device Yield
Journal de Physique III·1997Open Access
Correlation between oxygen distribution and luminescence efficiency in SiGe/Si layer structures measured by cathodoluminescence imaging and spectroscopy
Semiconductor Science and Technology·1997· 1 cited
Scanning Deep Level Transient Spectroscopy Measurements of Extended Defects in Silicon
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena·1996
Luminescence Investigations of the Interaction of Oxygen with Dislocations in CZ Si
1996
Influence of Cu Contamination and Hydrogenation on Recombination Activity of Misfit Dislocations in SiGe/Si Epilayers
Materials science forum·1995· 7 cited
Influence of copper contamination on recombination activity of misfit dislocations in SiGe/Si epilayers: Temperature dependence of activity as a marker characterizing the contamination level
Journal of Applied Physics·1995· 89 cited
Characterization of SiGe quantum wire structures by cathodoluminescence imaging and spectroscopy
Applied Physics Letters·1995· 4 cited
Cathodoluminescence investigation of SiGe quantum wires fabricated on V-groove patterned Si substrates
Journal of Crystal Growth·1995· 8 cited
Modification of Recombination Activity of Dislocations in Si and SiGe by Contamination and Hydrogenation
MRS Proceedings·1995· 1 cited
Influence of hydrogen on the electrical and optical activity of misfit dislocations in Si/SiGe epilayers
Applied Physics Letters·1994· 25 cited
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Frequent Co-authors

E C Lightowlers(19), M. Kittler(8), Gordon Davies(6), P. Kightley(5), C. J. Gibbings(4), C. G. Tuppen(4), V. Arbet-Engels(4), W. Seifert(3), G. Davies(3), J. M. G. Tijero(3), Alain Manissadjian(3), M. Goulding(2), F. Schäffler(2), E. Kasper(2), P.J. Goodhew(2), Fun‐Tat Chin(2), M.J. Gregson(2), S.T. Davey(2), K. L. Wang(2), C. Ulhaq-Bouillet(2)