Takashi Fuyuki

Centre National de la Recherche Scientifique — France

Engineering · Physical Sciences

38h-index6.5kcitations397works0.02yr avg
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Research Topics

Thin-Film Transistor Technologies(170), Semiconductor materials and devices(146), Silicon and Solar Cell Technologies(135), Silicon Carbide Semiconductor Technologies(116), Silicon Nanostructures and Photoluminescence(94)

Publications397 total

Large Area Radial Junction Silicon Nanowire Solar Mini-Modules
Scientific Reports·2018· 16 citedOpen Access
First Demonstration of Radial Junction Silicon Nanowire Solar Mini-Modules Prepared by PECVD and Laser Scribing
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)·2017
Enhancements of photoluminescence intensity in high-quality floating-zone Si by thermal annealing in vacuum
Japanese Journal of Applied Physics·2016
Low-temperature photoluminescence of 8H-SiC homoepitaxial layer
Japanese Journal of Applied Physics·2016
Investigation of crystallinity and planar defects in the Si nanowires grown by vapor–liquid–solid mode using indium catalyst for solar cell applications
Japanese Journal of Applied Physics·2015· 8 cited
On-site detection of defective panels in mega solar systems by handy electroluminescence surveillance
2015· 2 cited
Boron laser doping using spin-on dopant for textured crystalline silicon solar cell
Japanese Journal of Applied Physics·2015· 18 cited
Control of verticality and (111) orientation of In-catalyzed silicon nanowires grown in the vapour–liquid–solid mode for nanoscale device applications
Journal of Materials Chemistry C·2015· 11 cited
Threshold Voltage Instability in 4H-SiC MOSFETs With Phosphorus-Doped and Nitrided Gate Oxides
IEEE Transactions on Electron Devices·2014· 114 cited
High-precision transfer-printing and integration of vertically oriented semiconductor arrays for flexible device fabrication
Nano Research·2014· 14 cited
Surface polarity control to reinforce dopant adhesion in laser doping of textured silicon
Japanese Journal of Applied Physics·2014· 2 cited
Crystallographic Structure of 8H- and 10H-SiC Analyzed by Raman Spectroscopy and Diffraction Methods
Materials science forum·2014
Reduction of SiC-MOS Interface Traps and Improved MOSFET Performance by Phosphorus Incorporation into Gate Oxides
Hyomen Kagaku·2014· 1 citedOpen Access
Reduction of Emitter Leak Current by Selective Boron Laser Doping for Textured Crystalline Silicon Solar Cell
EU PVSEC·2014Open Access
Box Profiling of Boron by Laser Doping with Silicon Nano Ink
EU PVSEC·2014Open Access
A Study of Threshold Voltage Instability in 4H-SiC MOSFETs with POCl3- and NO-Annealed Gate Oxides
IEICE Technical Report; IEICE Tech. Rep.·2013
Fabrication of Single-Crystalline Silicon Solar Cells by Laser Doping using Phosphorus-Doped Silicon Nano Ink
Technical report of IEICE. SDM·2013
Fabrication of n-type Silicon Solar Cells by boron doping method using laser process
IEICE Technical Report; IEICE Tech. Rep.·2013
Nonvolatile Flash Memory Based on Biologically Integrated Hierarchical Nanostructures
Langmuir·2013· 10 cited
Improvement of the emitter properties by controlling the interface Between dopant and substrate in laser doping for textured silicon
2013
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Frequent Co-authors

Yukiharu Uraoka(31), Tomoaki Hatayama(16), Hiroyuki Matsunami(10), Hiroshi Yano(9), Ichiro Yamashita(9), Kensuke Nishioka(8), Tatsuo Yoshinobu(6), Atsushi Miura(5), Shigeo Yoshii(5), Tatsuya Takamoto(4), Takaaki Agui(4), M. Kaneiwa(4), Takio Hikono(3), Tsuyoshi Tsujioka(3), Yuji Hamada(3), Kenichi Shibata(3), Hideaki Mitsui(3), Y. Tsuchihashi(3), Hayato Kondō(2), Tsutomu Yamazaki(2)