J. Koga

Engineering · Physical Sciences

27h-index2.6kcitations112works0.02yr avg
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Research Topics

Semiconductor materials and devices(89), Advancements in Semiconductor Devices and Circuit Design(77), Integrated Circuits and Semiconductor Failure Analysis(35), Semiconductor materials and interfaces(30), Silicon and Solar Cell Technologies(17)

Publications112 total

4H-SiC Screw Dislocations and Their Electronic Structures
2013
Direct observation of boron dopant fluctuation by site-specific scanning spreading resistance microscopy
2012
Schottky barrier height modulation by atomic dipoles at the silicide/silicon interface
Physical Review B·2011· 20 cited
Heavily-Doped Poly-Si Gate and Epi-First Source/Drain Extension Technique in Strained Si Nanowire MOSFETs with Reduced Papasitic Resistance
2010
Insight into the S/D engineering by high-resolution imaging and precise probing of 2D-carrier profiles with scanning spreading resistance microscopy
2009· 7 cited
Influence of Ni silicide phases on effective work function modulation with Al-pileup in the Ni fully silicided gate/HfSiON system
Journal of Applied Physics·2009· 2 cited
Impact of platinum incorporation on thermal stability and interface resistance in NiSi/Si junctions based on first-principles calculation
2008· 12 cited
Dependence of Effective Work Function Modulation with Phosphorous Segregation on Ni to Si Ratio in Ni Silicide/SiO<sub>2</sub> Systems
Japanese Journal of Applied Physics·2008· 1 cited
Effective Work Function Control With Aluminum Postdoping in the Ni Silicide/HfSiON Systems
IEEE Transactions on Electron Devices·2008· 12 cited
Guidelines for the Threshold Voltage Control of Metal/HfSiON system
IEICE Technical Report; IEICE Tech. Rep.·2008
Guidelines for the threshold voltage control of metal/HfSiON system(Session2: Silicon Devices I)
SIAM International Conference on Data Mining·2008
Physical origin of suppressed effective work function modulation at boron segregated NiSi∕SiON interface
Journal of Applied Physics·2008· 2 citedOpen Access
Successful enhancement of metal segregation at NiSi/Si junction through pre-amorphization technique
2008· 3 cited
Dopant Condensation beyond Solubility Limit in the Vicinity of Silicon/Silicide Interface Based on First-Principles Calculations
MRS Proceedings·2008· 1 cited
Experimental Study on Performance Improvement in Dopant-Segregated Schottky Metal–Oxide–Semiconductor Field-Effect Transistors
Japanese Journal of Applied Physics·2008· 27 cited
Physical mechanism of effective work function modulation caused by impurity segregation at Ni silicide/SiO2 interfaces
Journal of Applied Physics·2007· 7 cited
Experimental study on electron mobility in ultrathin-body silicon-on-insulator metal-oxide-semiconductor field-effect transistors
Journal of Applied Physics·2007· 88 cited
Modeling of screening effect on remote Coulomb scattering due to gate impurities by nonuniform free carriers in poly-Si gate
Journal of Applied Physics·2007· 10 cited
Interfacial Segregation of Metal at NiSi/Si Junction for Novel Dual Silicide Technology
2007· 18 cited
Novel Carrier-Mobility Modeling with Interface States for MOSFETs with Highly Scaled Gate Oxide Based on First-Principles Calculations
2007· 1 cited
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Frequent Co-authors

Akira Toriumi(23), Ken Uchida(17), Shinichi Takagi(15), A. Kinoshita(8), R. Ohba(8), Naoharu Sugiyama(8), Tomoyuki Numata(7), Tetsuo Tezuka(6), Yoshifumi Nishi(6), Shin-ichi Takagi(5), Tomohisa Mizuno(5), Koji Usuda(5), Takashi Yamauchi(5), Atsuhiro Kinoshita(5), S. Takagi(4), Akihito Tanabe(4), Ken‐ichi Uchida(4), Y. Tsuchiya(4), Takamitsu Ishihara(4), Ryuji Ohba(3)