A.R. Adams

University of Surrey — United Kingdom

Physics and Astronomy · Physical Sciences

22h-index1.8kcitations88works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(68), Semiconductor Lasers and Optical Devices(33), Spectroscopy and Laser Applications(17), Photonic and Optical Devices(12), Semiconductor materials and devices(12)

Publications88 total

Physical properties of short wavelength 2.6µm InAs/AlSb-based quantum cascade lasers
2010· 1 cited
InGaAsN as absorber in APDs for 1.3 micron wavelength applications
2010· 1 cited
Band-structure and gain-cavity tuning of 2.4-µm GaSb buried tunnel junction VCSELs
2009
Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers
Applied Physics Letters·2008· 28 citedOpen Access
Dark current mechanisms in bulk GaInNAs photodiodes
2008
Experimental determination of the band gap dependence of Auger recombination in InGaAs∕InP multiple quantum well lasers at room temperature
Applied Physics Letters·2007· 21 citedOpen Access
Long wavelength bulk GaInNAs p−i−n photodiodes lattice matched to GaAs
Journal of Applied Physics·2007· 24 citedOpen Access
Temperature dependence of the gain in p-doped and intrinsic 1.3μm InAs∕GaAs quantum dot lasers
Applied Physics Letters·2006· 36 citedOpen Access
Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37μm
Applied Physics Letters·2006· 44 cited
Important carrier loss mechanisms in visible lasers revealed by hydrostatic pressure
2005· 1 cited
Effect of gain saturation and nonradiative recombination on the thermal characteristics of InAs/GaAs 1.3 /spl mu/m quantum dot lasers
2005· 1 cited
Recombination mechanisms in InAs/InP quantum dash lasers studied using high hydrostatic pressure
physica status solidi (b)·2004· 22 citedOpen Access
Temperature and pressure dependence of recombination processes in 1.5 μm InGaAlAs/InP‐based quantum well lasers
physica status solidi (b)·2004· 15 cited
Wavelength dependence of catastrophic optical damage threshold in 980 nm semiconductor diode lasers
2004
Radiative and Auger recombination in 1.3μm InGaAsP and 1.5μm InGaAs quantum-well lasers measured under high pressure at low and room temperatures
Applied Physics Letters·2004· 8 citedOpen Access
High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 μm
Applied Physics Letters·2003· 11 citedOpen Access
High‐pressure studies of the recombination processes, threshold currents, and lasing wavelengths in InAs/GaInAs quantum dot lasers
physica status solidi (b)·2003· 4 cited
Long wavelength lasers on GaAs substrates
IEE Proceedings - Circuits Devices and Systems·2003· 16 cited
New determination of the band structure of disordered AlGaInP and its influence on visible laser characteristics
2002
Self-heating effects in red (665 nm) VCSELs
IEE Proceedings - Optoelectronics·2001· 10 cited
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Frequent Co-authors

Stephen J. Sweeney(11), Eoin P. O’Reilly(8), P.D. Greene(8), D. J. Dunstan(5), C. N. Ahmad(5), A.T. Meney(4), A. Valster(4), B. N. Murdin(4), J. Allam(4), D. Lancefield(4), J. R. Hayes(4), A.F. Phillips(3), W. E. Spear(3), J. Sly(3), N. F. Massé(3), T.E. Sale(3), H. Statz(2), G. A. deMars(2), Luke M. Davis(2), A. El-Sabbahy(2)