J.L. Benchimol

Orange (France) — France

Physics and Astronomy · Physical Sciences

18h-index1.2kcitations99works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(63), Semiconductor materials and devices(28), Semiconductor Lasers and Optical Devices(28), Radio Frequency Integrated Circuit Design(27), Photonic and Optical Devices(20)

Publications99 total

InP/InGaAs HBT phototransistor as optoelectronic converter up to millimetre-wave bands
International Topical Meeting on Microwave Photonics·2005· 4 cited
Millimeter-Wave InP/InGaAs Photo-HBT and Its Application to Optoelectronic Integrated Circuits
IEICE Transactions on Electronics·2003· 3 cited
MSI InP/InGaAs DHBT technology: beyond 40 Gbit/s circuits
2003· 35 cited
High-speed InP/InGaAs heterojunction phototransistor for millimetre-wave fibre radio communications
2003· 15 cited
InP HBT self-aligned technology for 40 Gbit/s ICs: fabrication and CAD geometric model
2003· 7 cited
InP/InGaAs bipolar phototransistor as a front-end photoreceiver for HPR distribution networks
2003· 5 cited
40 Gbit/s optical communications: InP DHBT technology, circuits and system experiments
2003· 7 cited
Improvement of CBE grown InGaAs/InP HBT's using a carbon doped and compositionally graded base
2003· 6 cited
Evaluation of InP Epi-ready wafers for epitaxial growth
2002· 2 cited
Fully self-aligned InP/InGaAs heterojunction bipolar transistors grown by chemical beam epitaxy with a Schottky collector
2002· 2 cited
Orientation effect on Si/sub 3/N/sub 4/ passivated InP/InGaAs heterojunction bipolar transistors
2002· 7 cited
Carrier lifetime in carbon doped In/sub 0.53/Ga/sub 0.47/As
2002· 3 cited
Optoelectronic up-converter to millimetre-wave band using a heterojunction bipolar phototransistor
2002· 9 cited
Low-power operation of InP-based DHBT's for high bit rate circuit applications: reduction of saturation voltage (V/sub sat/)
2002
Carrier lifetime in p-doped InGaAs and InGaAsP
2002· 10 cited
A InP DHBT technology for high bit-rate optical communications circuits
2002· 6 cited
New scanning photoluminescence technique for mapping the lifetime and the doping density: application to carbon doped InGaAs/InP layers and heterostructures
2002· 3 cited
Passivation of InP-based HBTs for high bit rate circuit applications
2002· 16 cited
28 and 42 GHz narrow-band InP based phototransistor mixers for hybrid fibre radio distribution systems
2002· 4 cited
A 28 GHz HPT/HBT monolithically integrated photoreceiver for hybrid fibre radio distribution systems
2002· 4 cited
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Frequent Co-authors

F. Alexandre(14), M. Riet(10), B. Sermage(8), G. Le Roux(7), M. Quillec(6), Sylvain Blayac(6), P. Berdaguer(6), A. Konczykowska(6), J. Godin(6), C. Dubon‐Chevallier(6), P. Launay(6), A.M. Duchenois(6), J. Dangla(4), F. Héliot(4), J. Y. Marzin(4), Paulo André(4), P. Legay(4), Yang Gao(3), H. Thibierge(3), D. Caffin(3)