C. Schwab

Physics and Astronomy · Physical Sciences

29h-index2.8kcitations202works0.02yr avg
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Research Topics

Semiconductor materials and interfaces(33), Semiconductor materials and devices(32), Muon and positron interactions and applications(32), Chalcogenide Semiconductor Thin Films(28), Silicon and Solar Cell Technologies(25)

Publications202 total

Modelo para determinacao do parametro de saturacao de linhas atomicas por espectroscopia optogalvanica com laser pulsado
2014
Time evolution of photo-EPR and photo-electrical data on bulk semi insulating GaAs
2005
Carrier control by neutron-transmutation doping of semi-insulating GaAs
2005
Implantation damage in InP: thermal stability effects
2002
Raman spectroscopy of porous and bulk GaP subjected to MeV-ion implantation and annealing
Journal of Applied Physics·2000· 10 citedOpen Access
Second-harmonic generation from Na-covered Cu(110): intensity enhancement by inter-surface-state transitions?
Surface Science·2000· 8 cited
Low-temperature diamagnetic muonium states in n-type gallium arsenide
Physica B Condensed Matter·2000· 3 cited
Modelling hydrogen in the group-III nitrides by its pseudo-isotope, muonium
Physica B Condensed Matter·2000· 8 cited
Sites and motion of Mu− defect centers in n-type gallium nitride
Physica B Condensed Matter·2000· 11 cited
Muonium transitions in n-type gallium nitride
Physica B Condensed Matter·2000· 10 cited
Experimental intensity analysis of second harmonic generation at the Cu(110) surface
Surface Science·2000· 11 cited
ENSEIGNEMENT ET RELIGION (2000/36)
Les Cahiers de l ILTP Perspectives protestantes francophones en théologie pratique·2000Open Access
Optical Characteristics of Nanostructured III-V Compounds
2000
Negatively charged muonium states in gallium nitride
Physica B Condensed Matter·1999· 7 cited
Charge-state transitions of muonium in germanium
Physical review. B, Condensed matter·1999· 47 cited
Raman Modes in Porous GaP under Hydrostatic Pressure
physica status solidi (b)·1999· 11 cited
16 MeV-electron-induced defects in iron-doped indium phosphide
Journal of Applied Physics·1998
Porosity-Induced Optical Phonon Engineering in III-V Compounds
MRS Proceedings·1998· 1 cited
Ion implantation as a tool for controlling the morphology of porous gallium phosphide
Applied Physics Letters·1997· 48 citedOpen Access
Comparison of Muonium (Hydrogen) Dynamics in Germanium and Silicon
Materials science forum·1997· 6 cited
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Frequent Co-authors

A. Goltzené(15), T. L. Estle(8), R. F. Kiefl(7), B. Prévot(7), J. W. Schneider(6), K. H. Chow(6), B. Hitti(5), Bertrand Meyer(5), R. C. Hanson(4), J.P. Ponpon(4), R. Stuck(4), P. Siffert(4), W. A. MacFarlane(4), R. L. Lichti(4), S. F. J. Cox(3), J. E. Potts(2), Charles Walker(2), B. K. Meyer(2), C. Carabatos(2), B. Hennion(2)