Hongbo Yu

Bilkent University — Turkey

Physics and Astronomy · Physical Sciences

14h-index495citations30works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(29), Ga2O3 and related materials(17), ZnO doping and properties(9), Semiconductor Quantum Structures and Devices(8), Metal and Thin Film Mechanics(8)

Publications30 total

Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs
Semiconductors·2013· 14 citedOpen Access
Electron transport properties in Al<sub>0.25</sub>Ga<sub>0.75</sub>N/AlN/GaN heterostructures with different InGaN back barrier layers and GaN channel thicknesses grown by MOCVD
physica status solidi (a)·2012· 2 cited
Electrical and magnetic properties of Ga1−xGdxN grown by metal organic chemical vapor deposition
Journal of Applied Physics·2011· 23 citedOpen Access
Metalorganic chemical vapor deposition growth and thermal stability of the AlInN/GaN high electron mobility transistor structure
Semiconductor Science and Technology·2011· 14 citedOpen Access
Current transport mechanisms and trap state investigations in (Ni/Au)–AlN/GaN Schottky barrier diodes
Microelectronics Reliability·2010· 11 cited
MOCVD growth and optical properties of non-polar (11–20) a-plane GaN on (10–12) r-plane sapphire substrate
Journal of Crystal Growth·2010· 11 cited
Improvement of breakdown characteristics in AlGaN/GaN/Al<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>N HEMT based on a grading Al<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>N buffer layer
physica status solidi (a)·2010· 26 cited
Ultra low dark current solar blind focal plane arrays
2009
Dark current reduction in ultraviolet metal-semiconductor-metal photodetectors based on wide band-gap semiconductors
2009· 1 cited
Nanoscale InGaN/GaN on ZnO substrate for LED applications
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2009· 3 cited
Correlation of crystalline defects with photoluminescence of InGaN layers
Applied Physics Letters·2009· 32 citedOpen Access
MOCVD growth of GaN on Si(111) substrates using an ALD-grown Al2O3 interlayer
Journal of Crystal Growth·2009· 21 cited
MOVPE growth of AlGaN/GaN superlattices on ZnO substrates for green emitter applications
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2008· 1 cited
Effects of N doping on ZnO thin films grown by MOVPE
Journal of Crystal Growth·2008· 6 cited
MOVPE growth of AlGaN/GaN superlattices on ZnO substrates for green emitter applications
Journal of Crystal Growth·2008· 18 cited
High quality InGaN for photovoltaic applications: Type and spatial distribution of crystalline defects and &amp;#x201C;phase&amp;#x201D; separation
Conference record of the IEEE Photovoltaic Specialists Conference·2008· 6 cited
Optimization of GaN window layer for InGaN solar cells using polarization effect
Conference record of the IEEE Photovoltaic Specialists Conference·2008· 20 cited
Fabrication and optical properties of nano‐structured semipolar InGaN/GaN quantum wells on c‐plane GaN template
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2008· 4 citedOpen Access
MOCVD Growth of High-Hole Concentration (&gt;2×10<sup>19</sup> cm<sup>−3</sup>) P-Type InGaN for Solar Cell Application
MRS Proceedings·2008· 1 cited
Structural and optical properties of an InxGa1−xN/GaN nanostructure
Surface Science·2007· 10 cited
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Frequent Co-authors

Ekmel Özbay(17), Ian T. Ferguson(11), Serkan Bütün(7), Mustafa Kemal Öztürk(6), Andrew Melton(6), Mutlu Gökkavas(5), Balakrishnam Jampana(5), Omkar Jani(5), William E. Fenwick(5), Nola Li(5), R. L. Opila(4), Christiana B. Honsberg(4), Süleyman Özçelik(4), Hüseyin Çakmak(4), Shenjie Wang(4), Deniz Çalışkan(3), Turgut Tut(3), Bayram Bütün(3), Pakize Demirel(3), Shalini Gupta(3)