D.A. Shiau

MIT Lincoln Laboratory — United States

Physics and Astronomy · Physical Sciences

7h-index152citations18works0.02yr avg
OpenAlex↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Semiconductor Quantum Structures and Devices(9), Thermal Radiation and Cooling Technologies(7), Semiconductor materials and devices(6), solar cell performance optimization(6), Advanced Semiconductor Detectors and Materials(5)

Publications18 total

Extremely low surface recombination velocity in GaInAsSb∕AlGaAsSb heterostructures
Applied Physics Letters·2005· 11 cited
Effect of growth interruption on surface recombination velocity in GaInAsSb/AlGaAsSb heterostructures grown by organometallic vapor-phase epitaxy
Journal of Crystal Growth·2004· 4 cited
Ohmic contacts to n-type GaSb and n-type GalnAsSb
Journal of Electronic Materials·2004· 15 cited
Wafer bonding and epitaxial transfer of GaSb-based epitaxy to GaAs for monolithic interconnection of thermophotovoltaic devices
Journal of Electronic Materials·2004· 18 cited
Preparation of GaSb substrates for GaSb and GaInAsSb growth by organometallic vapor phase epitaxy
Journal of Crystal Growth·2003· 24 cited
Growth and characterization of InAsSb/GaInAsAb/AlGaAsAb/GaSb heterostructures for wafer-bonded thermophotovoltaic devices
Journal of Crystal Growth·2003· 11 cited
Organometallic vapor phase epitaxy of n-GaSb and n-GaInAsSb for low resistance ohmic contacts
Journal of Crystal Growth·2003· 23 cited
Non-Contact Determination of Free Carrier Concentration in n-GaInAsSb
2003· 1 citedOpen Access
Monolithically series-interconnected GaInAsSb/AlGaAsSb/GaSb thermophotovoltaic devices with an internal backsurface reflector formed by wafer bonding
Applied Physics Letters·2003· 40 cited
Organometallic Vapor Phase Epitaxy of n-GaSb and n-GaInAsSb for Low Resistance Ohmic Contacts
2003· 1 citedOpen Access
Wafer Bonding and Epitaxial Transfer of GaSb-based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices
2003· 1 citedOpen Access
Ohmic Contacts to n-type GaSb and n-type GaInAsSb
2003Open Access
Effect of Growth Interruption on the Properties of GaInAsSb/AlGaAsSb/GaSb Heterostructures and the Performance of Thermophotovoltaic Devices
MRS Proceedings·2003
Wafer Fusion ofGaSb to GaAs
MRS Proceedings·2003
Fabrication and Characterization of Wafer-Bonded GaInAsSb Epitaxy for Monolithically Interconnected Thermophotovoltaic Devices
MRS Proceedings·2003· 1 cited
Non-Contact Determination of Free Carrier Concentration in n-GaInAsSb
MRS Proceedings·2003· 1 cited
GaInAsSb/A1GaAsSb/Sb Thermophotovoltaic Devices With an Internal Back-Surface Reflector Formed by Wafer Bonding
2002Open Access
Wafer-Bonded Internal Back-Surface Reflectors for Enhanced TPV Performance
2002· 1 citedOpen Access

Frequent Co-authors

Robin Huang(9), Michael K. Connors(9), C.A. Wang(9), G. Nichols(7), Peter G. Murphy(6), P. W. O’Brien(6), Adam Campbell Anderson(6), D. M. DePoy(6), D. Donetsky(5), С. Г. Аникеев(5), Gregory Belenky(5), C. A. Wang(3), C.T. Harris(3), Christine A. Wang(3), M. N. Palmisiano(2), Serge Luryi(2), C.A. Wang(2), Z. L. Liau(2), James E. Maslar(2), C.A Wang(1)