B.I. Miller

Merck & Co., Inc., Rahway, NJ, USA (United States) — United States

Engineering · Physical Sciences

65h-index16.2kcitations563works3.22yr avg
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Research Topics

Photonic and Optical Devices(233), Semiconductor Lasers and Optical Devices(232), Semiconductor Quantum Structures and Devices(155), Optical Network Technologies(149), Advanced Photonic Communication Systems(70)

Publications558 total

The Loss Landscape of Powder X-Ray Diffraction-Based Structure Optimization Is Too Rough for Gradient Descent
arXiv (Cornell University)·2025Open Access
RCT Abstract - Efficacy and safety of sotatercept in patients with newly diagnosed pulmonary arterial hypertension at intermediate-to-high risk of mortality: Results from Phase 3 HYPERION study
2025
Long-Term Safety and Exposure-Adjusted Incidence Rates of Adverse Events From Pooled Sotatercept Studies (PULSAR, SPECTRA, STELLAR, and SOTERIA)
American Journal of Respiratory and Critical Care Medicine·2025
Equestrian STAR: Development of an Experimental Methodology for Assessing the Biomechanical Performance of Equestrian Helmets
Annals of Biomedical Engineering·2025· 1 citedOpen Access
Efficacy and safety of the activin signalling inhibitor, sotatercept, in a pooled analysis of PULSAR and STELLAR studies
European Respiratory Journal·2025· 15 citedOpen Access
Stray Current Interference Simulation and Mitigation Associated with Light Rail Transit (LRT) Systems and Adjacent Metallic Pipelines – a Case Study
2023
Phase 3 Trial of Sotatercept for Treatment of Pulmonary Arterial Hypertension
New England Journal of Medicine·2023· 561 citedOpen Access
Whitewater Helmet STAR: Evaluation of the Biomechanical Performance and Risk of Head Injury for Whitewater Helmets
Annals of Biomedical Engineering·2022· 4 cited
VERITAS (Venus Emissivity, Radio Science, InSAR, Topography, and Spectroscopy): A Discovery Mission
2022 IEEE Aerospace Conference (AERO)·2022· 65 cited
Four-State Sub-12-nm FETs Employing Lattice-Matched II–VI Barrier Layers
Journal of Electronic Materials·2013· 10 cited
Fabrication and Simulation of an Indium Gallium Arsenide Quantum-Dot-Gate Field-Effect Transistor (QDG-FET) with ZnMgS as a Tunnel Gate Insulator
Journal of Electronic Materials·2013· 3 cited
Indium Gallium Arsenide Quantum Dot Gate Field-Effect Transistor Using II–VI Tunnel Insulators Showing Three-State Behavior
Journal of Electronic Materials·2012· 9 cited
Four-state FETs incorporating quantum dot gate (QDG), quantum dot channel (QDC) and spatial wavefunction-switched (SWS) structures: Basis for 2-bit processing circuit architectures
2011
SPATIAL WAVEFUNCTION-SWITCHED (SWS)-FET: A NOVEL DEVICE TO PROCESS MULTIPLE BITS SIMULTANEOUSLY WITH SUB-PICOSECOND DELAYS
International Journal of High Speed Electronics and Systems·2011· 24 cited
Spatial Wavefunction-Switched (SWS) InGaAs FETs with II–VI Gate Insulators
Journal of Electronic Materials·2011· 43 cited
Nonvolatile Memory Effect in Indium Gallium Arsenide-Based Metal–Oxide–Semiconductor Devices Using II–VI Tunnel Insulators
Journal of Electronic Materials·2011· 10 cited
BOOK REVIEWS
International Journal of Jungian Studies·2011
Indium Gallium Arsenide Based Non-Volatile Memory Devices with Site-Specific Self-Assembled Germanium Quantum Dot Gate
MRS Proceedings·2010
Theoretical Aspects of Light Activated Semiconductor Microelectrodes: A Generalized Analysis
Journal of The Electrochemical Society·2010· 3 cited
Theoretical Aspects of Light-Activated Microelectrodes in Redox Electrolytes
Electrochemical and Solid-State Letters·2009· 5 citedOpen Access
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Frequent Co-authors

U. Koren(17), Adam Heller(9), M.G. Young(8), C.A. Burrus(8), Thomas Koch(5), M.A. Newkirk(5), I. Bar‐Joseph(4), Thomas Koch(3), G. Eisenstein(3), M. Oron(3), B. A. Parkinson(3), D. S. Chemla(3), L.A. Coldren(3), J. A. Rentschler(3), Namkyoo Park(3), Kerry J. Vahala(3), John E. Bowers(3), Gerhard Müller‐Newen(2), H. C. Casey(2), E. Pinkas(2)