G. Landis

Engineering · Physical Sciences

11h-index438citations28works0.02yr avg
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Research Topics

Silicon Carbide Semiconductor Technologies(15), Semiconductor materials and devices(8), Graphene research and applications(5), GaN-based semiconductor devices and materials(5), Diamond and Carbon-based Materials Research(5)

Publications28 total

Growth of Low-Dimensional Carbon Nanomaterials
Journal of Bioresource Management·2013Open Access
Growth of Graphene Architectures on SiC
Journal of Bioresource Management·2012Open Access
Electrical characterization of AlGaN/GaN on AlN substrates
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2008· 9 cited
Evaluation of test methods employed for characterizing semi-insulating nature of monocrystaline SiC semiconductor materials
2008
A Transport Study of AlGaN/GaN Heterostructures Grown on an AlN Substrate
APS Ohio Sections Fall Meeting Abstracts·2007
Compensation mechanism in high purity semi-insulating 4H-SiC
Journal of Applied Physics·2007· 28 cited
Study of the effects of an AlN interlayer on the transport properties of AlGaN∕AlN∕GaN heterostructures grown on SiC
Applied Physics Letters·2007· 17 cited
Vanadium donor and acceptor levels in semi-insulating 4H- and 6H-SiC
Journal of Applied Physics·2007· 48 cited
Deep Level near E<sub>C</sub> – 0.55 eV in Undoped 4H-SiC Substrates
Materials science forum·2006· 1 cited
Ohmic Contacts on p-Type SiC Using Al/C Films
Materials science forum·2006· 2 cited
Anisotropy in the quantum lifetime in AlGaN/GaN heterostructures
Journal of Electronic Materials·2006· 1 cited
Anisotropy in the Amplitude of Shubnikov-de Haas Oscillations in AlGaN/GaN Heterostructures
Bulletin of the American Physical Society·2006
The acceptor level for vanadium in 4H and 6H SiC
Physica B Condensed Matter·2006· 13 cited
Defect levels and types of point defects in high-purity and vanadium-doped semi-insulating 4H–SiC
Journal of Applied Physics·2004· 37 cited
High temperature Hall effect measurements of semi-insulating 4H–SiC substrates
Solid-State Electronics·2004· 19 cited
Overcoming absorption saturation with doping in p-type quantum well infrared photodetectors: modeling and experiment
Infrared Physics & Technology·2003
Off-resonant absorption in bound-to-continuum<i>p</i>-type<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">G</mml:mi><mml:mi mathvariant="normal">a</mml:mi><mml:mi mathvariant="normal">A</mml:mi><mml:mi mathvariant="normal">s</mml:mi><mml:mo>/</mml:mo><mml:mi mathvariant="normal">A</mml:mi><mml:mi mathvariant="normal">l</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">As</mml:mi></mml:math>quantum wells: Overcoming absorption saturation with doping
Physical review. B, Condensed matter·2003· 9 cited
Electrical contact behavior of Ni/C60/4H–SiC structures
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2003· 11 cited
Ohmic contact properties of Ni/C film on 4H-SiC
Solid-State Electronics·2003· 44 cited
Carbon structural transitions and ohmic contacts on 4H-SiC
Journal of Electronic Materials·2003· 45 cited
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Frequent Co-authors

W. C. Mitchel(22), William D. Mitchell(9), S. Elhamri(7), W. E. Collins(6), Weijie Lü(5), M. E. Zvanut(4), K. Mahalingam(4), R. Berney(4), J. S. Solomon(4), T. R. Crenshaw(3), L. Grazulis(3), S. R. Smith(3), M. Ahoujja(3), Frank Szmulowicz(3), T. Oogarah(3), D. H. Tomich(3), Gail J. Brown(3), Weijie Lu(2), H. E. SMITH(2), Wonwoo Lee(2)