G. Borghs

IMEC — Belgium

Physics and Astronomy · Physical Sciences

51h-index10.4kcitations519works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(185), Quantum and electron transport phenomena(101), Magnetic properties of thin films(92), Semiconductor materials and devices(91), Semiconductor Lasers and Optical Devices(68)

Publications519 total

Anodic Etching of n-GaN Epilayer into Porous GaN and Its Photoelectrochemical Properties
The Journal of Physical Chemistry C·2014· 83 cited
Spin-orbit interaction and spin coherence in narrow-gap semiconductor and semimetal wires
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2014· 5 cited
Impact of Plasma-Induced Surface Damage on the Photoelectrochemical Properties of GaN Pillars Fabricated by Dry Etching
The Journal of Physical Chemistry C·2014· 12 cited
Spin and phase coherence lengths in InAs wires with diffusive boundary scattering
Physical Review B·2013· 12 citedOpen Access
Enhanced Photocatalytic Activity of Nanoroughened GaN by Dry Etching
ECS Electrochemistry Letters·2013· 6 cited
Selective self-assembled monolayer coating to enable Cu-to-Cu connection in dual damascene vias
Microelectronic Engineering·2013· 12 cited
Single crystalline InxGa1−xN layers on germanium by molecular beam epitaxy
CrystEngComm·2013· 6 cited
Strain relaxation in GaN nanopillars
Applied Physics Letters·2012· 27 cited
Formation of V-grooves on the (Al,Ga)N surface as means of tensile stress relaxation
Journal of Crystal Growth·2012· 24 cited
Plasmon filters and resonators in metal-insulator-metal waveguides
Optics Express·2012· 104 citedOpen Access
Si Trench Around Drain (STAD) technology of GaN-DHFETs on Si substrate for boosting power performance
2011· 15 cited
A deep-level analysis of Ni–Au/AlN/(1 1 1) p<sup>+</sup>-Si metal–insulator–semiconductor capacitors
Journal of Physics D Applied Physics·2011· 16 cited
Two-color InGaN/GaN microfacet multiple-quantum well structures grown on Si substrate
Journal of Applied Physics·2011· 4 cited
GaN-based HEMTs tested under high temperature storage test
Microelectronics Reliability·2011· 18 cited
Enabling Cu-Cu connection in (dual) damascene interconnects by selective deposition of two different SAM molecules
2011
Temperature-dependent spin- and phase coherence measured via h/e and h/2e quantum oscillations in resistance of mesoscopic ring arrays in an InAs 2DES
Bulletin of the American Physical Society·2011
Mg doping of GaN by molecular beam epitaxy
Journal of Physics D Applied Physics·2011· 25 cited
A double-bead sandwich assay for protein detection in serum based on localized surface plasmon resonance
TechConnect Briefs·2011
Mechanisms of Schottky Barrier Control on n-Type Germanium Using Ge3N4 Interlayers
Journal of The Electrochemical Society·2011· 51 cited
Dependence of the Spin Coherence Length on Wire Width for Quasi-1-Dimensional InSb and InAs Wires and Bi Wire Surface States
AIP conference proceedings·2011· 2 cited
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Frequent Co-authors

J. De Boeck(14), Paul Heremans(7), W. Van Roy(6), Kai Cheng(6), Stefan Degroote(6), Maarten Leys(6), Marianne Germain(6), Chris Van Hoof(5), Joff Derluyn(5), Reiner Windisch(5), Vasyl Motsnyi(4), J. Das(4), W. De Raedt(4), T. M. Klapwijk(4), A. Knobloch(4), P. Kiesel(4), G. H. Döhler(4), E. Goovaerts(3), Steven Boeykens(3), R. Mertens(3)