M. J. Bevan

MP Technologies (United States) — United States

Engineering · Physical Sciences

19h-index1.2kcitations59works0.02yr avg
OpenAlex↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Semiconductor materials and devices(30), Advanced Semiconductor Detectors and Materials(19), Chalcogenide Semiconductor Thin Films(17), Integrated Circuits and Semiconductor Failure Analysis(15), Advancements in Semiconductor Devices and Circuit Design(14)

Publications59 total

Plasma enhanced activation of ion implanted dopants
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena·2025
Enabling Next Generation CMOS by Novel EOT Scaling Module
Symposium on VLSI Technology·2021· 1 cited
Characterization of film materials in wafer processing technology development by XPS
Journal of Electron Spectroscopy and Related Phenomena·2018· 2 cited
The effect of interfacial oxide and high-κ thickness on NMOS V<inf>th</inf> shift from plasma-induced damage
2014· 1 cited
HKMG process impact on N, P BTI: Role of thermal IL scaling, IL/HK integration and post HK nitridation
2013· 60 cited
Enabling thermal IL and ALD HfOx integration for sub-20nm gate stack
2013· 1 cited
Scaled Gate Stacks for Sub-20-nm CMOS Logic Applications Through Integration of Thermal IL and ALD HfOx
IEEE Electron Device Letters·2012· 12 cited
High-k Gate Stack: Improved Reliability through Process Clustering
ECS Transactions·2010
Nitric oxide rapid thermal nitridation for Flash memory applications
2010· 8 cited
Ultrathin SiO<sub>2</sub> interface layer growth
2010· 8 cited
High-k Gate Stack: Improved Reliability through Process Clustering
ECS Meeting Abstracts·2010Open Access
Intrinsic reoxidation of microwave plasma-nitrided gate dielectrics
Applied Physics Letters·2005· 4 cited
Dopant penetration studies through Hf silicate
Journal of Applied Physics·2005· 38 cited
An enhanced 90nm high performance technology with strong performance improvements from stress and mobility increase through simple process changes
2004· 21 cited
Evaluation of the positive biased temperature stress stability in HfSiON gate dielectrics
2003· 24 cited
Advanced CMOS transistors with a novel HfSiON gate dielectric
2003· 60 cited
A high performance 90 nm logic technology with a 37 nm gate length, dual plasma nitrided gate dielectric and differential offset spacer
2003· 5 cited
CMOS metal replacement gate transistors using tantalum pentoxide gate insulator
2002· 71 cited
Reliability evaluation of HfSiON gate dielectric film with 12.8 Å SiO/sub 2/ equivalent thickness
2002· 11 cited
Interdiffusion studies for HfSixOy and ZrSixOy on Si
Journal of Applied Physics·2002· 51 cited
page 1 of 3Next →

Frequent Co-authors

Luigi Colombo(14), M. R. Visokay(10), H. D. Shih(10), Antonio Rotondaro(7), H. Bu(7), R. Khamankar(6), W. M. Duncan(6), Manuel Quevedo-López(5), Bruce E. Gnade(5), Robert M. Wallace(5), James J. Chambers(4), M. El-Bouanani(4), Deeba Husain(4), N Doyle(4), Lancy Tsung(3), S. Aur(3), A. Shanware(3), Matthew Douglas(3), T. Grider(3), J. W. McPherson(3)