K. Kosai

Inflammatory Response Research (United States) — United States

Engineering · Physical Sciences

15h-index859citations34works0.02yr avg
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Research Topics

Advanced Semiconductor Detectors and Materials(25), Chalcogenide Semiconductor Thin Films(16), Semiconductor Quantum Structures and Devices(14), Infrared Target Detection Methodologies(8), Quantum Dots Synthesis And Properties(4)

Publications34 total

Models and measurements of Hg/sub 1-x/Cd/sub x/Te heterojunction transistors
2005
HgCdTe focal plane arrays for dual-color mid- and long-wavelength infrared detection
Journal of Electronic Materials·2004· 74 cited
Spectral crosstalk by radiative recombination in sequential-mode, dual mid-wavelength infrared band HgCdTe detectors
Journal of Electronic Materials·2004· 14 cited
Molecular-beam epitaxial growth and high-temperature performance of HgCdTe midwave infrared detectors
Journal of Electronic Materials·2002· 18 cited
Advances in linear and area HgCdTe APD arrays for eyesafe LADAR sensors
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2001· 14 cited
Advances in HgCdTe-based infrared detector materials: the role of molecular-beam epitaxy
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2001· 3 cited
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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2001· 7 cited
Enhanced diffusion and interdiffusion in HgCdTe from fermi-level effects
Journal of Electronic Materials·2000· 11 cited
MBE growth of HgCdTe avalanche photodiode structures for low-noise 1.55μm photodetection
Journal of Crystal Growth·1999· 27 cited
Epitaxial growth of HgCdTe 1.55-μm avalanche photodiodes by molecular beam epitaxy
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1999· 15 cited
Interdiffusion of HgTe/CdTe Hetero-Interfaces
1998
Molecular beam epitaxial growth and performance of HgCdTe-based simultaneous-mode two-color detectors
Journal of Electronic Materials·1998· 62 cited
Molecular beam epitaxial growth of HgCdTe midwave infrared multispectral detectors
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·1998· 11 cited
Molecular beam epitaxial growth and performance of integrated multispectral HgCdTe photodiodes for the detection of mid-wave infrared radiation
Journal of Crystal Growth·1998· 21 cited
Molecular beam epitaxial growth and performance of integrated two-color HgCdTe detectors operating in the mid-wave infrared band
Journal of Electronic Materials·1997· 29 cited
High performance HgCdTe two-color infrared detectors grown by molecular beam epitaxy
Journal of Crystal Growth·1997· 31 cited
Electrical and optical properties of infrared photodiodes using the InAs/Ga1−<i>x</i>In<i>x</i>Sb superlattice in heterojunctions with GaSb
Journal of Applied Physics·1996· 171 cited
High Performance HgCdTe-Detectors Grown by Molecular Beam Epitaxy
MRS Proceedings·1996· 1 cited
HgCdTe molecular beam epitaxy technology: A focus on material properties
Journal of Electronic Materials·1995· 13 cited
Status and application of HgCdTe device modeling
Journal of Electronic Materials·1995· 24 cited
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Frequent Co-authors

J. Eric Jensen(14), E. A. Patten(10), G. R. Chapman(9), O. K. Wu(9), T. J. de Lyon(8), S. M. Johnson(7), P. M. Goetz(7), J. A. Wilson(7), J. L. Johnson(6), R. Rajavel(6), D. M. Jamba(6), G. M. Venzor(5), W. A. Radford(5), E. Gordon(5), A. T. Hunter(5), M. Jack(4), B. A. Baumgratz(4), G. F. Neumark(4), Valerie Randall(4), Joseph P. Rosbeck(4)