David Zhou

University of California, Los Angeles — United States

Neuroscience · Life Sciences

12h-index1.1kcitations45works0.12yr avg
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Research Topics

Neuroscience and Neural Engineering(16), GaN-based semiconductor devices and materials(11), Silicon Carbide Semiconductor Technologies(7), Semiconductor materials and devices(7), EEG and Brain-Computer Interfaces(6)

Publications45 total

Thickness-dependent polarization modulation at AlN interlayers in GaN heterostructures revealed by atomic-scale 4D-STEM
Nanoscale·2025
Author response for "Thickness-Dependent Polarization Modulation at AlN Interlayers in GaN Heterostructures Revealed by Atomic-Scale 4D-STEM"
2025
Author response for "Thickness-Dependent Polarization Modulation at AlN Interlayers in GaN Heterostructures Revealed by Atomic-Scale 4D-STEM"
2025
Scheduled feeding improves behavioral outcomes and reduces inflammation in a mouse model of fragile X syndrome
eLife·2025Open Access
A Dual-Voltage 650 V and 100 V GaN Integrated Platform Featuring High-Performance Monolithic Components
2025
Understanding the Role of Buffer Traps in GaN HEMTs: A Simulation Study on Dynamic R<sub>on</sub>
2025
Investigation of L-FER ESD Protection Capability on E-mode p-GaN HEMT
2025
Dual- Vs. Single-Peak Transconductance Evolution in Schottky $p$-Gan Gate Hemts: Influence of Partially and Fully Depleted $p$-Gan Layer
2025
Stability of <i>V</i><sub>TH</sub> and <i>R</i><sub>ON</sub> in p‐GaN Schottky‐Gate AlGaN/GaN High‐Electron‐Mobility Transistors under Reverse and Gate Bias Stress: Impact of Gate Offset
physica status solidi (a)·2025Open Access
Subthreshold and turn-on characteristics in Schottky-type p-GaN Gate HEMTs: impact of partially and fully depleted p-GaN layer
Japanese Journal of Applied Physics·2025· 1 citedOpen Access
1200 V GaN-on-Si Junction Barrier Schottky (JBS) Diodes by an E-Mode-Compatibe Process
2024
Analysis of On-Resistance in 650-V Enhancement-Mode Active-Passivation p-GaN Gate HEMT
ECS Journal of Solid State Science and Technology·2024
The Non-Monotonic Instability of V<sub>TH</sub> and R<sub>ds,on</sub> in P-GaN Gate HEMTs Under Repetitive Short-Circuit Stress: The Role of Electric-Field &amp; Self-Heating Effect
2024
Investigation of Threshold Voltage Instability in p-GaN Gate HEMTs Under Surge Current Stress
2024
The UIS Withstand Capability and Device Failure Mechanism of 650 V p-GaN Gate HEMTs
2024
Power Supply Unit Cooling in a High Heat Capture Ratio Liquid Cooled Datacenter Server
2024
Comprehensive GaN-on-Si Power Device Platform with High Manufacturing Capacity and Quality
2023
"Not a perfect situation, but..." A single-practice survey of patient experience of phone consultations during COVID-19 Alert Level 4 in New Zealand.
PubMed·2021· 3 cited
Development and Clinical Introduction of the Nurotron Cochlear Implant Electrode Array
The Journal of International Advanced Otology·2019· 10 citedOpen Access
Re Indalex: The confluence of pension, insolvency, and fiduciary law.
Dalhousie journal of legal studies·2016Open Access
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Frequent Co-authors

Robert J. Greenberg(11), Yuxi Wan(9), Haibo Hu(8), Danfeng Mao(6), Amy Hines(4), Yitian Gu(4), Xinyan Tracy Cui(3), Elias Greenbaum(3), Rongxin Du(3), Jiamin Tian(3), Fangren Shen(3), Zidong Cai(3), Chao Feng(3), Qin Hu(3), Shuang Zhao(3), Qizhi Li(3), C. Cai(3), Wei Zeng(3), Hongyan Liu(3), Kuang-Tse Ho(3)