Man Chang

Engineering · Physical Sciences

23h-index5.0kcitations80works0.02yr avg
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Research Topics

Semiconductor materials and devices(49), Advanced Memory and Neural Computing(29), Ferroelectric and Negative Capacitance Devices(28), Advancements in Semiconductor Devices and Circuit Design(25), Electronic and Structural Properties of Oxides(16)

Publications80 total

Reliability characterization of 10nm FinFET technology with multi-V<inf>T</inf> gate stack for low power and high performance
2016· 26 cited
Self‐Limited Switching in Ta<sub>2</sub>O<sub>5</sub>/TaO<i><sub>x</sub></i> Memristors Exhibiting Uniform Multilevel Changes in Resistance
Advanced Functional Materials·2015· 125 cited
In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure
Nature Communications·2013· 345 citedOpen Access
Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device
Nanotechnology·2013· 136 cited
Performance of threshold switching in chalcogenide glass for 3D stackable selector
Symposium on VLSI Technology·2013· 46 cited
Physical electro-thermal model of resistive switching in bi-layered resistance-change memory
Scientific Reports·2013· 241 citedOpen Access
Bi‐Layered Reram: Multi‐Level Switching, Reliability and its Mechanism for Storage Class Memory and Reconfiguration Logic
Frontiers in Electronic Materials·2012
Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory
2012· 160 cited
Modeling for multilevel switching in oxide-based bipolar resistive memory
Nanotechnology·2012· 57 cited
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
Nature Materials·2011· 2.2k cited
Bi-layered RRAM with unlimited endurance and extremely uniform switching
Symposium on VLSI Technology·2011· 141 cited
Highly Uniform Switching of Tantalum Embedded Amorphous Oxide Using Self-Compliance Bipolar Resistive Switching
IEEE Electron Device Letters·2011· 76 cited
Improvement of interface quality by post-annealing on silicon nanowire MOSFET devices with multi-wire channels
Microelectronic Engineering·2010· 11 cited
Improved Resistive Switching Reliability in Graded NiO Multilayer for Resistive Nonvolatile Memory Devices
IEEE Electron Device Letters·2010· 21 cited
Advanced impurity trap memory with atomic-scale Ti impurities on LaAlO3: Evidence for the origins of enhanced memory performance
Applied Physics Letters·2009· 1 cited
Analysis of interface switching for Nb doped SrTiO3 single crystal device using complex impedance spectroscopy
Current Applied Physics·2009· 7 cited
Effect of high pressure hydrogen annealing on silicon nanowire MOSFET devices with multi-channel wires
2009Open Access
Device Performance and Reliability Characteristics of Tantalum–Silicon–Nitride Electrode/Hafnium Oxide n-Type Metal–Oxide–Semiconductor Field-Effect Transistor Depending on Electrode Composition
Japanese Journal of Applied Physics·2009· 5 cited
Characteristics of Traps Induced by Hot Holes Under Negative-Bias Temperature Stress in a pMOSFET
IEEE Electron Device Letters·2009· 1 cited
A Study on Relevant Factors to Work Stress of a Regional Hospital Nursing Staffs in Taiwan
한국간호과학회 학술대회·2009
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Frequent Co-authors

Hyunsang Hwang(17), Minseok Jo(15), Seungjae Jung(12), Hyejung Choi(11), Hyunsang Hwang(11), Joonmyoung Lee(10), Hokyung Park(10), Seung Ryul Lee(9), Myoung‐Jae Lee(8), U‐In Chung(8), Young‐Bae Kim(7), Chang Bum Lee(6), In-Kyeong Yoo(6), Chang Jung Kim(6), Baofu Ni(6), Richard Needleman(6), Dongsoo Lee(6), Byoung Hun Lee(6), Rino Choi(5), Dongsoo Lee(4)