J. M. Gaines

Physics and Astronomy · Physical Sciences

14h-index834citations49works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(32), Chalcogenide Semiconductor Thin Films(20), Quantum Dots Synthesis And Properties(12), Semiconductor Lasers and Optical Devices(9), Electron and X-Ray Spectroscopy Techniques(7)

Publications49 total

Predicting side-chain conformations of methionine using a hard-sphere model with stereochemical constraints
Bulletin of the American Physical Society·2015
Optical properties and Iineshape analysis of II-VI compounds obtained by spectroscopic ellipsometry
Conference on Lasers and Electro-Optics Europe·2005
Growth and characterization of low threshold-current-density II-VI blue-green laser diodes grown by molecular beam epitaxy
2002
Device characteristics of green II–VI semiconductor lasers
Materials Science and Engineering B·1997
Characterization of low defect density blue-green lasers
Journal of Crystal Growth·1996· 18 cited
Lateral waveguiding in blue-green II–VI semiconductor lasers
Journal of Crystal Growth·1996
Thermal index guiding in gain-guided blue-green II–VI semiconductor lasers
Journal of Applied Physics·1996· 5 cited
Carrier leakage in blue-green II–VI semiconductor lasers
Applied Physics Letters·1995· 9 cited
An investigation of energy-band offsets in the ZnSe/Zn1−<i>x</i>Mg<i>x</i>S<i>y</i>Se1−<i>y</i> multiquantum wells system
Applied Physics Letters·1995· 12 cited
Chemistry at the Al- and Au-ZnSe(100) interfaces
Physical review. B, Condensed matter·1995· 6 cited
In‐Situ Characterization of II‐VI Molecular Beam Epitaxy
physica status solidi (b)·1995· 1 cited
Structural Properties of II–VI Heterostructures for Blue‐Green Lasers
physica status solidi (b)·1995· 11 cited
Molecular beam epitaxy of II–VI wide bandgap semiconductors
Philips Journal of Research·1995· 7 cited
Thermal characteristics of blue-green II-VI semiconductor lasers
Journal of Applied Physics·1994· 14 citedOpen Access
Structures and electronic properties of misfit dislocations in ZnSe/GaAs(001) heterojunctions
Applied Physics Letters·1994· 11 cited
ZnSe(100): The surface and the formation of Schottky barriers with Al and Au
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·1994· 34 cited
An investigation of MBE growth of (Zn, Mg)Se using RHEED oscillations
Surface Science·1994· 11 cited
ZnSe(100) surface: Atomic configurations, composition, and surface dipole
Physical review. B, Condensed matter·1994· 55 cited
Improvement in lasing characteristics of II–VI blue-green lasers using quaternary and ternary alloys to produce pseudomorphic heterostructures
Journal of Crystal Growth·1994· 16 cited
Reduction of the Au/p-ZnSe(100) Schottky barrier height using a thin Se interlayer
Journal of Crystal Growth·1994· 4 cited
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Frequent Co-authors

J. Petruzzello(16), D. J. Olego(15), C. Ponzoni(13), K. W. Haberern(10), T. Marshall(10), R. R. Drenten(5), S. Geller(5), P. Soukiassian(4), P. S. Mangat(4), S. P. Herko(4), M. Buijs(4), P. M. Mensz(3), Khurram Shahzad(3), P. van der Sluis(3), W. Chen(3), J. C. Jans(3), Antoine Kahn(2), M. D. Pashley(2), G. M. Haugen(2), Yulin Chen(2)