T. Enoki

Kyoto University — Japan

Engineering · Physical Sciences

35h-index6.0kcitations259works0.02yr avg
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Research Topics

Photonic and Optical Devices(100), Semiconductor Quantum Structures and Devices(97), Radio Frequency Integrated Circuit Design(88), Semiconductor materials and devices(86), Semiconductor Lasers and Optical Devices(77)

Publications259 total

Non-collinear interaction of Rayleigh–Lamb and shear horizontal waves in a finite region in a plate
Wave Motion·2024
Final program
2014Open Access
Optical control of InP-based HEMT 60GHz oscillators with sub-harmonic injection locking
2010· 1 cited
High-electron-mobility In<inf>0.53</inf>Ga<inf>0.47</inf>As/In<inf>0.8</inf>Ga<inf>0.2</inf>As composite-channel modulation-doped structures grown by metal-organic vapor-phase epitaxy
2010· 14 cited
Vector modulator-based phase shifter with 810º control range for 43-Gbps optical transceivers
2009· 14 cited
DC to 50 GHz single-pole four-throw InP-HEMT switch IC with highly uniform performance
Electronics Letters·2009
Ultra-thin in InAlP/InGaAs heterojunctins grown by metal-organic vapor-phase epitaxy
2009
Emitter-metal-related degradation in InP-based HBTs operating at high current density and its suppression by refractory metal
Microelectronics Reliability·2009· 14 cited
Improvement of device characteristics in MIS AlGaN/GaN heterostructure field‐effect transistors by designing insulator/AlGaN structures
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2009· 2 cited
Design of insulator/AlGaN structures in MIS AlGaN/GaN HFETs for higher device performance
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2009· 1 cited
A 125-GHz 140-mW InGaAs/InP composite-channel HEMT MMIC power amplifier module
IEICE Electronics Express·2009· 18 citedOpen Access
Millimeter-wave MMIC Technologies for F-band Application
IEICE Technical Report; IEICE Tech. Rep.·2008
Millimeter-wave MMIC Technologies Exploring F-band Application
SIAM International Conference on Data Mining·2008
Millimeter-wave MMIC Technologies Exploring F-band Application(Session7: Millimeter-wave and Terahertz Devices)
Medical Entomology and Zoology·2008
Hot-Carrier-Related Increase in Drain Resistance and Its Suppression by Reducing Contaminants in InP-Based HEMTs
IEEE Transactions on Device and Materials Reliability·2008· 4 cited
Optical control of InP-based HEMT millimeter-wave oscillators
2008
DC—40-GHz SP4T switch IC using high-breakdown-voltage InGaAs/InP composite-channel HEMTs with an InAlP etch stopper
2008
High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal–Organic Vapor-Phase Epitaxy
Japanese Journal of Applied Physics·2008· 6 cited
Analysis of electrical properties of insulators (Si<sub>3</sub>N<sub>4</sub>, SiO<sub>2</sub>, AlN, and Al<sub>2</sub>O<sub>3</sub>)/0.5 nm Si<sub>3</sub>N<sub>4</sub>/AlGaN/GaN heterostructures
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2007· 4 cited
Optical Response of InP-based High-Electron Mobility Transistor and its Applications to High-Speed Photo-Detectors and Signal Converters
Conference proceedings. ... International Conference on Indium Phosphide and Related Materials·2007· 4 cited
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Frequent Co-authors

Y. Ishii(16), Yukio Umeda(13), Yasuhiko Imai(9), Kunihiro Arai(7), Taiichi Otsuji(7), Tatsushi Akazaki(6), Tetsuya Suemitsu(6), Hiroshi Itô(6), Haruki Yokoyama(5), S. Kimura(5), Koichi Murata(5), M. Yoneyama(5), Eiichi Sano(5), Junsaku Nitta(4), Hideaki Takayanagi(4), M. Muraguchi(4), Yohtaro Umeda(3), Hideaki Yokoyama(3), T. Ishii(3), M. Tokumitsu(3)