Kwang-Seok Seo

Seoul National University — South Korea

Engineering · Physical Sciences

23h-index1.8kcitations214works0.02yr avg
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Research Topics

Semiconductor materials and devices(87), GaN-based semiconductor devices and materials(79), Semiconductor Quantum Structures and Devices(56), Advancements in Semiconductor Devices and Circuit Design(54), Radio Frequency Integrated Circuit Design(53)

Publications214 total

Lg = 50 nm Gate-All-Around In0.53Ga0.47As Nanosheet MOSFETs with Regrown In0.53Ga0.47As Contacts
Electronics·2022Open Access
The Variation of Schottky Barrier Height Induced by the Phase Separation of InAlAs Layers on InP HEMT Devices
Crystals·2022· 4 citedOpen Access
Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
Crystals·2021· 9 citedOpen Access
Thermal Boundary Resistance Extraction of GaN-on-Diamond Substrate from Transmission Line Method Pattern Using Micro-Raman Spectroscopy and Thermal Simulation
Journal of Nanoscience and Nanotechnology·2021
Low-Damage and Self-Limiting (Al)GaN Etching Process through Atomic Layer Etching Using O2 and BCl3 Plasma
Coatings·2021· 22 citedOpen Access
P-GaN Gated AlGaN/GaN E-mode HFET Fabricated with Selective GaN Etching Process
JSTS Journal of Semiconductor Technology and Science·2020· 5 cited
Low Phase Noise Concurrent Dual-Band (5/7 GHz) CMOS VCO Using Gate Feedback on Nonuniformly Wound Transformer
IEEE Microwave and Wireless Components Letters·2020· 13 cited
Vertical growth characterization of InAs nanowires grown by selective area growth on patterned InP(1 1 1)B substrate by a MOCVD method
Solid-State Electronics·2020· 1 cited
Development of Catalytic-CVD SiNx Passivation Process for AlGaN/GaN-on-Si HEMTs
Crystals·2020· 10 citedOpen Access
PECVD SiNx passivation for AlGaN/GaN HFETs with ultra-thin AlGaN barrier
Solid-State Electronics·2020· 10 cited
Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
Materials·2020· 27 citedOpen Access
The effect of edge-terminated structure for lateral AlGaN/GaN Schottky barrier diodes with gated ohmic anode
Solid-State Electronics·2020· 8 cited
Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire
physica status solidi (a)·2019· 9 cited
Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT
Japanese Journal of Applied Physics·2019· 6 cited
Normally-off recessed-gate AlGaN/GaN MOS-HFETs with plasma enhanced atomic layer deposited AlO <i> <sub>x</sub> </i> N <i> <sub>y</sub> </i> gate insulator
Semiconductor Science and Technology·2019· 13 cited
Characterization of High-Performance InGaAs QW-MOSFETs With Reliable Bi-Layer HfO<sub>x</sub>N<sub>y</sub> Gate Stack
IEEE Journal of the Electron Devices Society·2019· 2 citedOpen Access
Enhanced Interface Characteristics of PA-ALD HfO<sub>x</sub>N<sub>y</sub>/InGaAs MOSCAPs Using IPA Oxygen Reactant and Cyclic N<sub>2</sub> Plasma
IEEE Electron Device Letters·2018· 8 cited
Comparison of biosimilar filgrastim with a reference product: pharmacokinetics, pharmacodynamics, and safety profiles in healthy volunteers
Drug Design Development and Therapy·2018· 6 citedOpen Access
Time-dependent dielectric breakdown of recessed AlGaN/GaN-on-Si MOS-HFETs with PECVD SiO2 gate oxide
Vacuum·2018· 11 cited
Ka-Band MMIC Using AlGaN/GaN-on-Si With Recessed High- Dual MIS Structure
IEEE Electron Device Letters·2018· 14 cited
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Frequent Co-authors

Ho‐Young Cha(20), Hyun‐Seop Kim(8), Jae‐Hak Lee(6), Minseong Lee(6), Jae-Gil Lee(5), Sangsub Song(5), Youngwoo Kwon(5), Jesús A. del Alamo(4), Do Hyun Kim(4), Donghwan Kim(4), Su‐Keun Eom(4), Jin-Cherl Her(4), Myoung‐Jin Kang(4), Bong-Ryeol Park(3), Chun-Hyung Cho(3), Namcheol Jeon(3), Hyungtak Kim(3), Minyoung Kim(3), Sangwoo Han(3), Sungwon Kim(3)