H. Aharoni

Ben-Gurion University of the Negev — Israel

Materials Science · Physical Sciences

20h-index1.2kcitations116works0.02yr avg
OpenAlex↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Silicon Nanostructures and Photoluminescence(51), Semiconductor materials and devices(44), Thin-Film Transistor Technologies(41), Silicon and Solar Cell Technologies(30), Integrated Circuits and Semiconductor Failure Analysis(19)

Publications116 total

Realization of GHz band integrated optical links in a radio frequency Si Ge bipolar process operating at 650 to 850 nm wavelength
Optical Engineering·2022Open Access
Stimulation of 700–900 nm wavelength optical emission from Si AMLEDs and coupling into Si<sub>3</sub>N<sub>4</sub> waveguides using a RF silicon integrated circuit process
OSA Continuum·2020· 3 citedOpen Access
A CMOS Microdisplay Utilizing Hot Carrier Electroluminescence From Reverse-biased Si PN Junctions
Journal of Physics Conference Series·2017Open Access
Si light-emitting device in integrated photonic CMOS ICs
Optical Materials·2017· 40 cited
Two terminal and multiterminal efficient planar Silicon Light Emitting Devices (Si-LED's) fabricated by standard IC technology as components for all silicon monolithic integrated optoelectronic systems
2010
The Growth of Thin Silicon Oxide and Silicon Nitride Films at Low Temperature (400 $^{\circ}{\hbox{C}}$) and High Growth Rates for Semiconductor Device Fabrication by an Advanced Low Electron Temperature Microwave-Excited High-Density Plasma System
IEEE Transactions on Semiconductor Manufacturing·2010
Anomalous photovoltaic effect in nanocrystalline Si∕SiO2 composites
Applied Physics Letters·2008· 15 cited
Injection-Avalanche-Based n<sup>+</sup>pn Silicon Complementary Metal–Oxide–Semiconductor Light-Emitting Device (450–750 nm) with 2-Order-of-Magnitude Increase in Light Emission Intensity
Japanese Journal of Applied Physics·2007· 52 cited
Microcrystalline/Amorphous Thin Si Films Deposition by a Newly Developed Dual Injection System Employing Hydrogen Plasma and Silicon Radicals at Low Temperature (300 °C) Chemical Vapor Deposition Process
Japanese Journal of Applied Physics·2007· 5 cited
Two order increase in the optical emission intensity of CMOS integrated circuit Si LED's (450nm - 750nm). Injection-avalanche based n<sup>+</sup>pn and p<sup>+</sup>np designs
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2007· 1 cited
Thin SiON Film Grown at Low Temperature (400$^circhboxC$) by Microwave-Excited High-Density$hboxKr/hboxO_2/hboxN_2$Plasma
IEEE Transactions on Plasma Science·2006· 3 cited
Low temperature (300℃) growth of crystalline/non-crystalline thin Si films by a newly developed single shower dual injection system employing microwave excited high density hydrogen plasma and silicon radicals CVD process.
2006
Thin SiON Film Grown at Low Temperature (400 ◦ C) by Microwave-Excited High-Density
2006
Light emission from two junction Si CMOS LED’s (450nm ? 750nm) with two order increase in emission intensity - Applications for next generation silicon-based optoelectronics
2006· 3 cited
A dependency of quantum efficiency of silicon CMOS n/sup +/pp/sup +/ LEDs on current density
IEEE Photonics Technology Letters·2005· 29 cited
Spatial and intensity modulation of light emission from silicon LED matrix
2005· 2 cited
Increasing the efficiency of three terminal silicon CMOS LED's through current density and carrier injection techniques
2005· 6 cited
Higher efficiency silicon CMOS light-emitting devices (450nm - 750nm) using current density and carrier injection techniques
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2005· 3 cited
Three terminal n/sup +/ppn silicon CMOS light emitting devices (450 nm - 750 nm) with three order increase in quantum efficiency
2005· 6 cited
Low-voltage light emitting devices in silicon IC technology
2005· 6 cited
page 1 of 6Next →

Frequent Co-authors

Lukas W. Snyman(17), M. du Plessis(8), Monuko du Plessis(8), T. J. Coutts(6), A. Bar‐Lev(4), Tadahiro Ohmi(4), Masaki Hirayama(4), A. J. Nelson(3), S. Margalit(3), R. G. Dhere(3), T. A. Gessert(3), T. Ohmi(3), Pieter L. Swart(3), Raghu N. Bhattacharya(2), H. Shen(2), P. Parayanthal(2), Fred H. Pollak(2), Lars‐Hendrik Schilling(2), Alice Biber(2), Alfons W. Bogalecki(2)