R. Doradziński

Freiberger Compound Materials (Germany) — Germany

Physics and Astronomy · Physical Sciences

19h-index1.6kcitations34works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(29), ZnO doping and properties(13), Ga2O3 and related materials(10), Semiconductor Quantum Structures and Devices(7), Metal and Thin Film Mechanics(6)

Publications34 total

Numerical Analysis of Gas Flow Instabilities in Simplified Vertical HVPE GaN Reactors
Crystals·2022· 5 citedOpen Access
Vacancy–hydrogen complexes in ammonothermal GaN
Journal of Crystal Growth·2014· 50 cited
Preparation of free-standing GaN substrates from GaN layers crystallized by hydride vapor phase epitaxy on ammonothermal GaN seeds
Japanese Journal of Applied Physics·2014· 26 cited
Highly resistive GaN substrates for high frequency electronics
European Microwave Conference·2013· 1 cited
Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds
Applied Physics Express·2013· 61 cited
AMMONO-GaN substrates for microwave and RF applications
2012· 2 cited
Non-polar and semi-polar ammonothermal GaN substrates
Semiconductor Science and Technology·2012· 46 cited
AMMONO-GaN substrates for microwave and RF electronics applications
Elektronika : konstrukcje, technologie, zastosowania·2012· 1 cited
Transparency of GaN substrates in the mid‐infrared spectral range
Crystal Research and Technology·2011· 19 cited
Growth of GaN epilayers on c-, m-, a-, and (20.1)-plane GaN bulk substrates obtained by ammonothermal method
Journal of Crystal Growth·2011· 15 cited
Ammonothermal GaN substrates: Growth accomplishments and applications
physica status solidi (a)·2011· 86 cited
Contactless electroreflectance of AlGaN/GaN heterostructures deposited on <i>c</i>-, <i>a</i>-, <i>m</i>-, and (20.1)-plane GaN bulk substrates grown by ammonothermal method
Journal of Applied Physics·2011· 7 citedOpen Access
Application of contactless electroreflectance to study the epi readiness of m-plane GaN substrates obtained by ammonothermal method
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2010· 9 cited
Structural and Optical Properties of Semipolar GaN Substrates Obtained by Ammonothermal Method
Applied Physics Express·2010· 18 cited
Optical and structural properties of <i>m</i> ‐plane GaN substrates grown by ammonothermal method and GaN epilayers grown on these substrates
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2010· 8 cited
Recent achievements in AMMONO-bulk method
Journal of Crystal Growth·2010· 86 cited
Ammonothermal growth of GaN substrates
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2010· 1 cited
Ammonothermal Growth of GaN Under Ammono-Basic Conditions
Springer series in materials science·2010· 27 cited
Properties of truly bulk GaN monocrystals grown by ammonothermal method
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2009· 16 citedOpen Access
Nonpolar GaN substrates grown by ammonothermal method
Applied Physics Letters·2009· 56 cited
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Frequent Co-authors

R. Dwiliński(25), Marcin Zając(20), L. Sierzputowski(19), Robert Kucharski(17), J. Garczyński(16), M. Rudziński(12), R. Kudrawiec(12), M. Kamińska(7), J. Misiewicz(7), Włodek Strupiński(7), J. Serafińczuk(6), Jacek Baranowski(5), J. Spałek(4), Y. Kanbara(3), M. Palczewska(3), A. Puchalski(2), K. Yagi(2), Hisashi Minakuchi(2), Hiroaki Hayashi(2), Tomasz Sochacki(2)