Y. Setiawan

University of Brawijaya — ID

Engineering · Physical Sciences

8h-index164citations21works0.02yr avg
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Research Topics

Semiconductor materials and devices(12), Semiconductor materials and interfaces(11), Silicon and Solar Cell Technologies(8), Silicon Nanostructures and Photoluminescence(7), Electronic and Structural Properties of Oxides(6)

Publications21 total

PENGARUH PENGGUNAAN MINYAK JAGUNG UNTUK CUTTING FLUID PADA PROSES FACE MILLING TERHADAP KEKASARAN PERMUKAAN PERMUKAAN DAN LAJU KOROSI BAJA KARBON
Jurnal Rekayasa Mesin·2023Open Access
Textured Ni(Pt) Germanosilicide Formation on a Condensed Si[sub 1−x]Ge[sub x]/Si Substrate
Journal of The Electrochemical Society·2009· 6 citedOpen Access
Lu 2 O 3 ∕ Al 2 O 3 gate dielectrics for germanium metal-oxide-semiconductor devices
Applied Physics Letters·2008· 9 citedOpen Access
Plasmon‐enhanced polarized Raman spectroscopy for sensitive surface characterization
Journal of Raman Spectroscopy·2008· 8 cited
Laser-Induced Melt-Mediated Ni(Pt) Germanosilicide Formation on Condensed Si[sub 1−x]Ge[sub x]/Si Substrates
Electrochemical and Solid-State Letters·2008· 2 citedOpen Access
Materials and Electrical Characterization of Er(Si[sub 1−x]Ge[sub x])[sub 2−y] Films Formed on Si[sub 1−x]Ge[sub x](001) (x=0–0.3) via Rapid Thermal Annealing
Journal of The Electrochemical Society·2007· 2 citedOpen Access
Formation of Silicided Hyper-Shallow p+/n- Junctions by Pulsed Laser Annealing
ECS Meeting Abstracts·2007Open Access
Formation of Silicided Hyper-Shallow p+/n- Junctions by Pulsed Laser Annealing
ECS Transactions·2007· 2 cited
Effect of low fluence laser annealing on ultrathin Lu2O3 high-k dielectric
Applied Physics Letters·2007· 20 citedOpen Access
Thermal stability of rare-earth based ultrathin Lu2O3 for high-k dielectrics
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·2007· 23 citedOpen Access
Al<sub>2</sub>O<sub>3</sub>nanocrystals embedded in amorphous Lu<sub>2</sub>O<sub>3</sub>high-k gate dielectric for floating gate memory application
Journal of Physics Conference Series·2007· 4 citedOpen Access
Laser-induced Ni(Pt) germanosilicide formation through a self-limiting melting phenomenon on Si1−xGex∕Si heterostructure
Applied Physics Letters·2007· 7 citedOpen Access
Nickel silicide formation using multiple-pulsed laser annealing
Journal of Applied Physics·2007· 13 citedOpen Access
Laser Annealed Ni(Ti) Silicides Formation
2006
Formation of SrTiO3 nanocrystals in amorphous Lu2O3 high-k gate dielectric for floating gate memory application
Applied Physics Letters·2006· 8 citedOpen Access
Formation of SiO<sub>2</sub>nanocrystals in Lu<sub>2</sub>O<sub>3</sub>high-<i>k</i>dielectric by pulsed laser ablation and application in memory device
Nanotechnology·2006· 5 cited
Laser-induced Ni(Ti) silicide formation
Applied Physics Letters·2006· 15 citedOpen Access
A simple approach to form Ge nanocrystals embedded in amorphous Lu <sub>2</sub> O <sub>3</sub> high- <i>k</i> gate dielectric by pulsed laser ablation
Europhysics Letters (EPL)·2006· 15 cited
LaAlO[sub 3] Nanocrystals Embedded in Amorphous Lu[sub 2]O[sub 3] High-k Gate Dielectric for Floating Gate Memory Application
Electrochemical and Solid-State Letters·2006· 11 citedOpen Access
Erbium silicidation on SiGe for advanced MOS application
Thin Solid Films·2005· 5 cited
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Frequent Co-authors

Pooi See Lee(20), K. L. Pey(10), Peter Darmawan(8), G.C. Lim(6), Cailei Yuan(5), Jun Ma(2), T. Osipowicz(2), X. C. Wang(2), F. L. Chow(2), M. Y. Chan(2), S. Balakumar(2), E. J. Tan(2), Kenneth Keng Wee Ong(2), X.C. Wang(2), Andrew T. S. Wee(2), Junyu Lai(1), Pan Yang(1), X. C. Wang(1), T. Zhang(1), Debbie Hwee Leng Seng(1)