J. R. LaRoche

RTX (United States) — United States

Engineering · Physical Sciences

19h-index1.7kcitations60works0.02yr avg
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Research Topics

Semiconductor materials and devices(30), GaN-based semiconductor devices and materials(29), Semiconductor Quantum Structures and Devices(17), Silicon Carbide Semiconductor Technologies(10), Semiconductor materials and interfaces(10)

Publications60 total

(Invited) Towards a Si Foundry-Compatible, GaN-on-Si Mmic Process on 200 Mm Si with a Cu Damascene BEOL
ECS Meeting Abstracts·2017· 1 cited
More Than Moore - Wafer Scale Integration of Dissimilar Materials on a Si Platform
2015· 5 cited
Novel Wide Energy Bandgap Electronic and Optical Devices I
225th ECS Meeting (May 11-15, 2014)·2014
(Invited) GaN HEMT Fabrication in a 200mm Si Foundry Environment: The Time Has Come
ECS Meeting Abstracts·2014
(Invited) GaN HEMT Fabrication in a 200mm Si Foundry Environment: The Time Has Come
ECS Transactions·2014· 1 cited
Feasibility Study on Screen Printing as a Fabrication Technique for Low-Cost Thermoelectric Devices
2014· 1 cited
More Than Moore: GaN HEMTs and Si CMOS Get It Together
2013· 21 cited
(Invited) Heterogeneous Integration of III-V Devices and Si CMOS on a Silicon Substrate
ECS Transactions·2013· 4 cited
Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena·2011· 85 cited
AlGaN/GaN high electron mobility transistors on 100 mm silicon substrates by plasma molecular beam epitaxy
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena·2011· 20 cited
Molecular beam epitaxial growth and properties of GaAs pseudomorphic high electron mobility transistors on silicon composite substrates
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena·2010· 3 cited
Thermal considerations for advanced SOI substrates designed for III-V/Si heterointegration
2009· 3 citedOpen Access
A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates
2009· 38 cited
Progress and challenges in the direct monolithic integration of III–V devices and Si CMOS on silicon substrates
2009· 4 citedOpen Access
Monolithic integration of InP-based transistors on Si substrates using MBE
Journal of Crystal Growth·2008· 59 cited
Engineering Substrates for 3D Integration of III-V and CMOS
ECS Transactions·2008· 2 cited
Monolithic III-V/Si Integration
ECS Transactions·2008· 11 cited
Monolithic III-V/Si integration
2008· 2 cited
MBE growth of InP-HBT structures on Ge-on-insulator/Si substrates by MBE
2008
Thermal Stability of Au Schottky Diodes on GaAs Deposited at Either 77 or 300 K
Journal of The Electrochemical Society·2006· 1 cited
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Frequent Co-authors

F. Ren(30), S. J. Pearton(27), T.E. Kazior(15), W. E. Hoke(11), Kwang Hyeon Baik(9), Young-Woo Heo(8), D. P. Norton(8), K. Ip(8), F. Ren(8), D. Lubyshev(8), Mayank T. Bulsara(8), Eugene A. Fitzgerald(8), Albert G. Baca(8), B. S. Kang(7), J. M. Fastenau(7), Nicolas Daval(7), W. Ha(6), J. Bergman(6), B. Luo(6), Miguel Urteaga(5)