B. Rose

Engineering · Physical Sciences

11h-index462citations35works0.02yr avg
OpenAlex↗Google Scholar↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Semiconductor Lasers and Optical Devices(20), Semiconductor Quantum Structures and Devices(18), Photonic and Optical Devices(18), Semiconductor materials and devices(5), Semiconductor materials and interfaces(4)

Publications35 total

PENPal-HF: A Randomized Pilot Trial of a Nurse-Led Primary Palliative Intervention in Outpatient Cardiology (RP507)
Journal of Pain and Symptom Management·2022
Full-Wave Codes Applied to Reflectometry Measurements of Core-Edge Turbulence in NSTX
APS Division of Plasma Physics Meeting Abstracts·2009
4-wavelength DBR laser array fabricated with a single grating holographic exposure technique
2005· 1 cited
Influence of CCI/sub 4/on lnP and on the Incorporation of Zn and Si in lnP for Chlorine Assisted Selective Area Epitaxy by AP-MOVPE
Sixth International Conference Metalorganic Vapor Phase Epitaxy·2005
Ultra fast electro-optical distributed Bragg reflector laser for optical switching
2002· 2 cited
An application of selective area MOVPE at atmospheric pressure to the realisation of a DBR laser
2002· 5 cited
Highly uniform InGaAlP/InGaP/GaAs structures by low pressure MOVPE
2002
Butt-jointed DBR laser with 15 nm tunabilitygrown in three MOVPE steps
Electronics Letters·1995· 43 cited
Subnanosecond tunable distributed Bragg reflector lasers with an electrooptical Bragg section
IEEE Journal of Selected Topics in Quantum Electronics·1995· 15 cited
Ultra-fast optical switching operation of DBR lasers using an electro-optical tuning section
IEEE Photonics Technology Letters·1995· 10 cited
Monolithic integration on InP of a Wannier Stark modulator with a strained MQW DFB 1.55-μm laser
IEEE Photonics Technology Letters·1995· 6 cited
Experimental study of the hydrogen complexes in indium phosphide
Physical review. B, Condensed matter·1993· 74 cited
Chlorine assisted selective area epitaxy in AP-MOVPE of InP: influence of CCl4 on growth and on Zn and Si incorporation
Journal of Crystal Growth·1992· 4 cited
Iron redistribution studies in adjacent acceptor-doped InP layers: application to a new SI-BH laser structure
Journal of Crystal Growth·1992· 2 cited
Efficient direct diode-laser frequency doubling in quasi-phase-matched LiNbO_3 waveguides
Optics Letters·1992· 20 cited
Multi-wafer growth of highly uniform InGaP/GaAs by low pressure MOVPE
Journal of Electronic Materials·1992· 6 cited
High-speed, InGaAsP/InP multiple quantum well, 1.55 μm singlemode modulator
Electronics Letters·1991· 11 cited
High-depth-resolution SIMS analysis for InGaAs/InP interfaces
Applied Surface Science·1991· 2 cited
Iron incorporation in InP layers using a ferrocene source in atmospheric pressure MOVPE
Journal of Crystal Growth·1991· 12 cited
Buried-ridge-stripe lasers monolithically integrated with butt-coupled passive waveguides for OEIC
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1991
page 1 of 2Next →

Frequent Co-authors

D. Robein(13), A. Mircéa(6), Franck Delorme(6), B. Theys(5), C. Kazmierski(5), J. Chevallier(4), Abdul Jalil(4), S. Slempkès(4), Denis Rémiens(4), V. Hornung(4), B. Pajot(3), A. Ramdane(3), Martine Gilleron(3), J.C. Pesant(2), M. Aucouturier(2), G. Alibert(2), R. Mellet(2), P. Dasté(2), A.M. Pougnet(2), Yang Gao(2)