R. D. Long

Anhui University of Finance and Economics — China

Engineering · Physical Sciences

11h-index463citations21works0.02yr avg
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Research Topics

Semiconductor materials and devices(18), Advanced Memory and Neural Computing(6), Advancements in Semiconductor Devices and Circuit Design(6), Semiconductor materials and interfaces(6), Ferroelectric and Negative Capacitance Devices(5)

Publications21 total

Inheriting the Red Spirit and Exploring Youth Development
International Journal of Education and Humanities·2024Open Access
Oxide Charge Engineering of Atomic Layer Deposited AlO<sub><i>x</i></sub>N<sub><i>y</i></sub>/Al<sub>2</sub>O<sub>3</sub> Gate Dielectrics: A Path to Enhancement Mode GaN Devices
ACS Applied Materials & Interfaces·2016· 26 cited
Functionality Demonstration of a High-Density 1.1V Self-Aligned Split-Gate NVM Cell Embedded into LP 40 nm CMOS for Automotive and Smart Card Applications
2015· 6 cited
Interface trap evaluation of Pd/Al<sub>2</sub>O<sub>3</sub>/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen
Applied Physics Letters·2013· 65 cited
The Characterization and Passivation of Fixed Oxide Charges and Interface States in the $\hbox{Al}_{2}\hbox{O}_{3}/ \hbox{InGaAs}$ MOS System
IEEE Transactions on Device and Materials Reliability·2013· 48 citedOpen Access
Admittance and subthreshold characteristics of atomic-layer-deposition Al2O3 on In0.53Ga0.47As in surface and buried channel flatband metal-oxide-semiconductor field effect transistors
Journal of Applied Physics·2012· 5 cited
Erratum: Charged Defect Quantification in Pt/Al<sub>2</sub>O<sub>3</sub>/In<sub>0.53</sub>Ga<sub>0.47</sub>As/InP MOS Capacitors [<i>J. Electrochem. Soc.</i>, 158, G103 (2011)]
Journal of The Electrochemical Society·2012· 1 cited
Charged Defect Quantification in Pt∕Al2O3∕In0.53Ga0.47As∕InP MOS Capacitors
Journal of The Electrochemical Society·2011· 34 citedOpen Access
Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition
Journal of Applied Physics·2009· 25 citedOpen Access
Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks
Microelectronics Reliability·2009· 15 cited
Electrical characterization of the soft breakdown failure mode in MgO layers
Applied Physics Letters·2009· 9 citedOpen Access
Post-breakdown conduction in metal gate/MgO/InP structures
2009· 1 cited
Growth, ambient stability and electrical characterisation of MgO thin films on silicon surfaces
Microelectronic Engineering·2009· 31 cited
Degradation dynamics and breakdown of MgO gate oxides
Microelectronic Engineering·2009· 8 citedOpen Access
Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods
Applied Physics Letters·2009· 94 citedOpen Access
Soft breakdown in MgO dielectric layers
2009· 11 citedOpen Access
Growth and characterisation of thin MgO layers on Si(100) surfaces
Journal of Physics Conference Series·2008· 25 citedOpen Access
<i>In situ</i> H2S passivation of In0.53Ga0.47As∕InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric
Applied Physics Letters·2008· 54 cited
Temperature dependent capacitance-voltage and conductance-voltage characterisation of the HfO2
2008
Development of X-ray streak camera electronics at AWRE
Laser and Particle Beams·1986· 5 cited
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Frequent Co-authors

Paul K. Hurley(14), K. Cherkaoui(12), Eileen O’Connor(11), Scott Monaghan(11), G. Hughes(9), P. Casey(8), Paul C. McIntyre(6), Ian M. Povey(5), Martyn E. Pemble(5), Dan O’Connell(5), E. Miranda(5), S. B. Newcomb(3), Barry Brennan(3), Aileen O׳Mahony(2), Guy Brammertz(2), Kevin Thomas(2), Francis Chalvet(2), B. Shin(2), Joël Cagnon(2), Susanne Stemmer(2)