Hangbing Lv

Chongqing University of Posts and Telecommunications — China

Engineering · Physical Sciences

53h-index10.1kcitations221works4.12yr avg
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Research Topics

Advanced Memory and Neural Computing(191), Ferroelectric and Negative Capacitance Devices(161), Semiconductor materials and devices(80), Neuroscience and Neural Engineering(34), Electronic and Structural Properties of Oxides(30)

Publications221 total

3D magnetotelluric imaging of lithospheric magmatic systems in the Yitong Volcanic Area, Northeast China: Implications for fault-zone segmentation and seismic rupture dynamics along the Yilan-Yitong Fault
Tectonophysics·2025
Regional gravity field changes before and after the Menyuan MS 6.9 earthquake in 2022 and the Jishishan MS 6.2 earthquake in 2023
Frontiers in Earth Science·2025Open Access
A Physics-Based Compact Model for Ferroelectric/Antiferroelectric Mixed Phase Capacitor Incorporating Reliability Characteristics
IEEE Transactions on Electron Devices·2025· 1 cited
Kalman Filter-Based High-Accuracy Indoor Positioning With NLoS Error Mitigation and Multi-Motion Model Switching
IEEE Transactions on Vehicular Technology·2025· 3 cited
Preparation, properties and emulsifying capacity of octenyl succinic anhydride modified peach gum polysaccharide
International Journal of Biological Macromolecules·2025· 8 cited
SiC Etch with Inductively Coupled Plasma for Power Device Applications
2025
Biodegradation of N-methyl-2-pyrrolidone (NMP) in wastewater: A review of current knowledge and future perspectives
Journal of Cleaner Production·2024· 17 cited
A 9-Mb HZO-Based Embedded FeRAM With 10-Cycle Endurance and 5/7-ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier<sup/>
IEEE Journal of Solid-State Circuits·2023· 21 cited
Ultralow‐Power Compact Artificial Synapse Based on a Ferroelectric Fin Field‐Effect Transistor for Spatiotemporal Information Processing
Advanced Intelligent Systems·2023· 8 citedOpen Access
A Hf0.5Zr0.5O2 ferroelectric capacitor-based half-destructive read scheme for computing-in-memory
Science China Information Sciences·2023· 1 cited
A 9Mb HZO-Based Embedded FeRAM with 10<sup>12</sup>-Cycle Endurance and 5/7ns Read/Write using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier
2023· 21 cited
A 28 nm 512 Kb adjacent 2T2R RRAM PUF with interleaved cell mirroring and self-adaptive splitting for high density and low BER cryptographic key in IoT devices
Microelectronics Journal·2022· 6 cited
Probabilistic Circuit Implementation Based on P-Bits Using the Intrinsic Random Property of RRAM and P-Bit Multiplexing Strategy
Micromachines·2022· 18 citedOpen Access
Performance Improvement of Memristor-Based Echo State Networks by Optimized Programming Scheme
IEEE Electron Device Letters·2022· 14 cited
Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging
Nature Communications·2021· 261 citedOpen Access
Unified 0.75pJ/Bit TRNG and Attack Resilient 2F<sup>2</sup>/Bit PUF for Robust Hardware Security Solutions with 4-layer Stacking 3D NbO<sub>x</sub> Threshold Switching Array
2021 IEEE International Electron Devices Meeting (IEDM)·2021· 16 cited
Resistive Random Access Memory (RRAM) Technology: From Material, Device, Selector, 3D Integration to Bottom-Up Fabrication
Kluwer international series in electronic materials: science and technology·2021· 5 cited
Investigation of weight updating modes on oxide-based resistive switching memory synapse towards neuromorphic computing applications
Science China Information Sciences·2021
Sensing Circuit Design Techniques for RRAM in Advanced CMOS Technology Nodes
Micromachines·2021· 15 citedOpen Access
Low-cost dual-stage offset-cancelled sense amplifier with hybrid read reference generator for improved read performance of RRAM at advanced technology nodes
Journal of Semiconductors·2021· 3 cited
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Frequent Co-authors

Qi Liu(41), Ming Liu(30), Shibing Long(22), Shibing Long(13), Xiaoxin Xu(11), Ming Liu(10), Qing Luo(10), Writam Banerjee(10), Xumeng Zhang(8), Xiaolong Zhao(8), Qiming He(8), Hang Dong(8), Wei Wang(7), Yuan Qin(7), Guangzhong Jian(7), Ling Li(6), Ying Zhang(6), Nianduan Lu(6), Hongtao Liu(6), Yingtao Li(5)