Yusuke Ohtomo

NTT (Japan) — Japan

Engineering · Physical Sciences

13h-index553citations82works0.02yr avg
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Research Topics

Photonic and Optical Devices(35), Semiconductor Lasers and Optical Devices(31), Optical Network Technologies(28), Advanced Photonic Communication Systems(24), Advancements in PLL and VCO Technologies(22)

Publications82 total

An STM-16 Frame Termination VLSI With 2.5-Gb/s/Pin Input/Output Buffers: High-Speed and Low-Power Multi-<inline-formula> <tex-math notation="LaTeX">$\mathrm{V}_{\rm DD}$ </tex-math></inline-formula> CMOS/SIMOX Techniques
IEEE Transactions on Very Large Scale Integration (VLSI) Systems·2014· 3 cited
10.3-Gb/s burst-mode CDR with idle insertion and digital calibration in 40-nm CMOS for 10G-EPON systems
2013· 4 cited
Analysis and design based on small-signal equivalent circuit for a lO-GHz ring VCO with 65-nm CMOS
2013· 1 cited
A 25-Gb/s LD driver with area-effective inductor in a 0.18-µm CMOS
2013· 3 cited
Small and Low-Cost Dual-Rate Optical Triplexer for OLT Transceivers in 10G/1G Co-existing 10G-EPON Systems
IEICE Transactions on Electronics·2013· 1 cited
Small and Low-cost Optical Modules (BOSA and Triplexer) for 10G-EPON Applications
Technical report of IEICE. OPE·2012
Design method for an over-IO-Gb/s CMOS CML buffer circuit for delay control
2012· 1 cited
Small and low-cost dual-rate optical triplexer for 10G-EPON OLT transceivers
2012· 2 cited
A 10Gb/s burst-mode laser diode driver for burst-by-burst power saving
2012· 3 cited
A 16Gb/s area-efficient LD driver with interwoven inductor in a 0.18µm CMOS
2012
Area-Effective Inductive Peaking with Interwoven Inductor for High-Speed Laser-Diode Driver for Optical Communication System
IEICE Transactions on Fundamentals of Electronics Communications and Computer Sciences·2012· 1 cited
A Burst-Mode Laser Diode Driver with Burst-by-Burst Power Saving for 10G-EPON Systems
2012· 2 cited
Bandwidth enhancement for high speed amplifier utilizing mutually coupled on-chip inductors
2011· 6 cited
A Burst-Mode APD-ROSA Using Reset Signal With Less Than 100 ns Response for 1G/10G-EPON Dual-Rate Optical Transceivers
Journal of Lightwave Technology·2011· 9 cited
10-Gbit/s Burst-mode Receiver Integrated Circuits for Broadband Optical Access Networks
NTT technical review·2011· 5 citedOpen Access
An SoC demonstration of ONU discovery and dynamic bandwidth allocation for 10G/1G dual-rate 10G-EPON
2011· 3 cited
An SoC demonstration of ONU discovery and dynamic bandwidth allocation for 10G/1G dual-rate 10G-EPON
2011· 4 cited
An Injection-Controlled 10-Gb/s Burst-Mode CDR Circuit for a 1G/10G PON System
IEICE Transactions on Electronics·2011· 2 cited
Burst-mode optical receiver ICs for broadband access networks
2010· 5 cited
A 16Gbps laser-diode driver with interwoven peaking inductors in 0.18-µm CMOS
2010· 6 cited
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Frequent Co-authors

Makoto Nakamura(16), Kazuyoshi Nishimura(12), M. Nogawa(11), S. Kimura(11), Masafumi Nogawa(10), Susumu Nishihara(8), Hiroaki Katsurai(8), M. Ino(8), Jun Terada(7), Naoto Yoshimoto(7), M. Togashi(7), Tomoaki Yoshida(6), Keiji Kishine(6), Kazutoshi Nishimura(6), Akira Okada(6), Tsuyoshi Ito(6), Tomoaki Kawamura(5), H. Kamitsuna(5), Kazutoshi Kato(4), Makoto Tsubokawa(4)