Han-Sung Joo

Samsung (South Korea) — South Korea

Engineering · Physical Sciences

5h-index902citations7works0.02yr avg
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Research Topics

Semiconductor materials and devices(3), Advanced Data Storage Technologies(3), Interconnection Networks and Systems(2), 3D IC and TSV technologies(2), Cellular Automata and Applications(2)

Publications7 total

A 1.2V 1.33Gb/s/pin 8Tb NAND flash memory multi-chip package employing F-chip for low power and high performance storage applications
2017· 8 cited
7.6 1GB/s 2Tb NAND flash multi-chip package with frequency-boosting interface chip
2015· 20 cited
A 20nm 1.8V 8Gb PRAM with 40MB/s program bandwidth
2012· 309 cited
8 Gb 3-D DDR3 DRAM Using Through-Silicon-Via Technology
IEEE Journal of Solid-State Circuits·2010· 484 cited
Dynamic Vpass ISPP scheme and optimized erase Vth control for high program inhibition in MLC NAND flash memories
2009· 5 cited
8Gb 3D DDR3 DRAM using through-silicon-via technology
2009· 73 cited
Development of an automated system for soldering and the solder inspection of an assembly line
2002· 3 cited

Frequent Co-authors

Hoeju Chung(3), Sooho Cha(3), Jei-Hwan Yoo(3), Ki-Sung Kim(3), Kitae Park(3), Uksong Kang(2), Seongmoo Heo(2), Hoon Lee(2), Soon-Hong Ahn(2), Jaesung Ahn(2), DukMin Kwon(2), Jae‐Wook Lee(2), Woo-Seop Kim(2), Youngdon Choi(2), Yong-Jin Kwon(2), Yeong-Taek Lee(2), Hyunjin Kim(2), Jangwoo Lee(2), Daehoon Na(2), Seungwoo Yu(2)