C. Parks

University of Nevada, Reno — United States

Engineering · Physical Sciences

20h-index1.2kcitations84works0.02yr avg
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Research Topics

Semiconductor materials and devices(27), Semiconductor Quantum Structures and Devices(17), Ion-surface interactions and analysis(12), Semiconductor materials and interfaces(11), Integrated Circuits and Semiconductor Failure Analysis(9)

Publications84 total

VS-TAP: Veteran Services Tracking and Analytics Program
EPiC series in computing·2021Open Access
Anti-CD3 Mono-Fab co-potentiates TCR antigen recognition in human T cells
The Journal of Immunology·2020
A Brief Look into Biometrics and One Use in Higher Education
Journal of the Association for Information Systems·2019· 1 citedOpen Access
Investigation on critical thickness dependence of ALD TiN diffusion barrier in MOL
2016· 10 cited
Through silicon via (TSV) effects on devices in close proximity - the role of mobile ion penetration - characterization and mitigation
2014· 5 cited
A role for CD3 conformation in the preTCR/CD3 complex (P4428)
The Journal of Immunology·2013
Electromigration extendibility of Cu(Mn) alloy-seed interconnects, and understanding the fundamentals
2012· 13 cited
Residual Stress Properties of Nickel and Copper Deposits Used for C4 Interconnects
ECS Transactions·2011
Improvement of RC performance for advanced ULK/Cu interconnects with CVD hybrid dielectric/metal liner
2011· 3 cited
Residual Stress Properties of Nickel Sulfamate and Copper Sulfate Deposits
ECS Meeting Abstracts·2011Open Access
BEAM EXPOSURE DEPENDENCE AND MECHANISMS OF PHOTON-STIMULATED DESORPTION FROM ALKALI FLUORIDES - eScholarship
2008
Enumeration of aromatic oxygenase genes to evaluate biodegradation during multi-phase extraction at a gasoline-contaminated site
Journal of Hazardous Materials·2008· 30 cited
Ni–Pt silicide formation through Ti mediating layers
Microelectronic Engineering·2007· 3 cited
Analysis of Nickel Silicides by SIMS and LEAP
AIP conference proceedings·2007· 2 cited
Reduction Of Residual Oxygen Incorporation In High-power Single Quantum Well Lasers Grown By Molecular Beam Epitaxy
2005
Reliability, yield, and performance of a 90 nm SOI/Cu/SiCOH technology
2004· 18 cited
Erratum: “Hydrogen induced tunnel emission in Pt/(BaxSr1−x)Ti1+yO3+z/Pt thin film capacitors” [J. Appl. Phys. <b>89</b>, 2873 (2001)]
Journal of Applied Physics·2003Open Access
Plasma immersion ion implantation as an alternative deep trench buried-plate doping technology
2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432)·2003· 2 cited
SIMS and modeling of ion implants into photoresist
2002· 5 cited
High performance single work-function tungsten gate CMOS devices for gigabit DRAM
2002· 3 cited
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Frequent Co-authors

R. A. Rosenberg(11), G.M. Loubriel(9), Victor Rehn(8), A. K. Ramdas(6), L. R. Ram‐Mohan(6), Masanori Murakami(5), R. H. Stulen(5), M. L. Knotek(5), P. R. LaRoe(4), W. H. Price(4), Anita Madan(4), Yih-Cheng Shih(3), K. D. Childs(3), A. K. Ramdas(3), M. R. Melloch(3), R. G. Alonso(3), Sidney Cohen(3), J. D. Baniecki(2), R. B. Laibowitz(2), T. M. Shaw(2)