Takafumi Yao

National Institute of Advanced Industrial Science and Technology — Japan

Materials Science · Physical Sciences

51h-index10.4kcitations415works0.02yr avg
OpenAlex↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

ZnO doping and properties(157), GaN-based semiconductor devices and materials(131), Ga2O3 and related materials(123), Semiconductor Quantum Structures and Devices(121), Quantum Dots Synthesis And Properties(60)

Publications415 total

Excitation light intensity dependence of 2.2 eV yellow photoluminescence of n-type GaN
Japanese Journal of Applied Physics·2020· 2 cited
Molecular Beam Epitaxy of Wide Gap II-VI Compounds
2018
p-Type Conductivity Control in ZnO Films Grown by Molecular-Beam Epitaxy
Materials science forum·2016
Threading dislocation reduction in a GaN film with a buffer layer grown at an intermediate temperature
Journal of the Korean Physical Society·2015· 1 cited
Growth and characterization of Mg Zn1−O films grown on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy
Journal of Alloys and Compounds·2014· 5 cited
Characteristics of intermediate state related to anti-Stokes luminescence of ZnO single crystals
Journal of Applied Physics·2014· 1 cited
Microstructural Characterization of High Indium-Composition In<sub><i>X</i></sub>Ga<sub>1−<i>X</i></sub>N Epilayers Grown on <i>c</i>-Plane Sapphire Substrates
Microscopy and Microanalysis·2013· 2 cited
Waveguide lasing from V-shaped ZnO microstructure
Optics Letters·2013· 4 cited
Nearly 4-Inch-Diameter Free-Standing GaN Wafer Fabricated by Hydride Vapor Phase Epitaxy with Pit-Inducing Buffer Layer
Japanese Journal of Applied Physics·2013· 11 cited
Corrigendum: Local stress distribution in GaN vertical light-emitting diodes fabricated using CLO and LLO methods
Journal of Physics D Applied Physics·2013· 1 citedOpen Access
Influence of Isoelectronic Te Doping on the Physical Properties of ZnO Films Grown by Molecular-Beam Epitaxy
Japanese Journal of Applied Physics·2013· 10 cited
Local stress distribution in GaN vertical light-emitting diodes fabricated using CLO and LLO methods
Journal of Physics D Applied Physics·2013· 5 cited
Growth and stuctural characterization of InGaN layers with controlled In content prepared by plasma-assisted molecular beam epitaxy
Thin Solid Films·2013· 3 cited
Polarity Determination of Polarity-Controlled ZnO Films Using Photoresponse Characteristics
Journal of Electronic Materials·2013· 2 cited
Free‐standing GaN wafer by one‐stop HVPE with pit‐induced buffer layer
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2013· 2 cited
Effective Detection Method for Misoriented Grains in Nonpolar GaN Layers and Future Prospect
Materia Japan·2013Open Access
Growth of N-polar GaN Using a CrN buffer layer on (0001) Al2O3 via plasma-assisted molecular beam epitaxy
Thin Solid Films·2012· 3 cited
p-type conductivity control of heteroepitaxially grown ZnO films by N and Te codoping and thermal annealing
Journal of Crystal Growth·2012· 20 cited
A facile method for patterned growth of ZnO nanowires using a black ink
Electronic Materials Letters·2012· 7 cited
Lattice Deformation in $a$-Plane ZnO Films Grown on $r$-Plane Al$_{2}$O$_{3}$ Substrates Grown by Plasma-Assisted Molecular-Beam Epitaxy
Applied Physics Express·2012· 7 cited
page 1 of 21Next →

Frequent Co-authors

Yefan Chen(13), Soon‐Ku Hong(12), Hang-Ju Ko(9), Hiroyuki Kato(8), Kazuhiro Miyamoto(8), M. Sano(8), Takashi Hanada(7), Yusaburo Segawa(4), Darren M. Bagnall(3), Z. Q. Zhu(3), Hang Ju Ko(3), Kenji Hiraga(2), Toshihiko Takeda(2), Yasumasa Okada(2), Hyun‐Yong Lee(2), Hisao Makino(2), Akinori Tanaka(2), Aishi Yamamoto(2), Takenari Goto(2), Daisuke Imai(2)