Rolf Sauer

Universität Ulm — Germany

Physics and Astronomy · Physical Sciences

10h-index393citations39works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(15), ZnO doping and properties(14), Semiconductor Quantum Structures and Devices(12), Ga2O3 and related materials(8), Diamond and Carbon-based Materials Research(5)

Publications39 total

Modeling novel effects in transient current measurements of single-crystal CVD diamond with carrier excitation by MeV α-particles
Diamond and Related Materials·2020· 1 cited
New Electronic Manuscript Submission and Tracking System
Strahlentherapie und Onkologie·2011Open Access
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi>I</mml:mi><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>basal plane stacking fault in GaN: Origin of the 3.32 eV luminescence band
Physical Review B·2011· 50 cited
Stacking fault‐related luminescence features in semi‐polar GaN
physica status solidi (b)·2011· 13 cited
Single-electron transistors based on self-assembled silicon-on-insulator quantum dots
Applied Physics Letters·2010· 32 cited
Near band‐gap photoluminescence of InN due to Mahan excitons
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2009· 4 cited
13 Halbleiter-Leuchtdioden und -Laser
Oldenbourg Verlag eBooks·2009
14 Silizium-Technologie
Oldenbourg Verlag eBooks·2009
Spectral behaviour of semipolar GaInN/GaN on {11 anti 22} and {1 anti 101} semipolar facets
Verhandlungen der Deutschen Physikalischen Gesellschaft·2009
ZnO Nanostructures: Optical Resonators and Lasing
Advances in solid state physics·2008· 2 cited
Dynamics of Stimulated Emission in Single ZnO Nanorod Resonators
Journal of the Korean Physical Society·2008· 4 cited
Silicon‐doping induced strain of AlN layers: a comparative luminescence and Raman study
physica status solidi (RRL) - Rapid Research Letters·2008· 18 cited
Mahan excitons in degenerate wurtzite InN: Photoluminescence spectroscopy and reflectivity measurements
Physical Review B·2008· 57 cited
Gain competition and mode shifts in ZnO nanorod lasers
2008
High quantum efficiency of semipolar GaInN/GaN quantum wells
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2008· 6 cited
Influence of doping on the reliability of AlGaInP LEDs
Journal of Materials Science Materials in Electronics·2008· 23 cited
Semipolar {1 anti 101} GaInN quantum wells for green light emitting diodes
Verhandlungen der Deutschen Physikalischen Gesellschaft·2008
Conductivity of single ZnO nanorods after Ga-implantation in a focused-ion-beam system
Verhandlungen der Deutschen Physikalischen Gesellschaft·2008· 1 cited
Lasing dynamics in single ZnO nanorods
Optics Express·2008· 64 citedOpen Access
Growth of zinc oxide nanopillars on an iridium/yttria-stabilized zirconia/silicon substrate
Applied Physics Letters·2007· 11 cited
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Frequent Co-authors

K. Thonke(27), Martin Feneberg(15), Anton Reiser(9), M. Schirra(8), F. Scholz(8), Thomas Wunderer(6), Frank Lipski(5), Johannes Fallert(4), H. Kalt(4), A. Ladenburger(4), G. M. Prinz(4), Felix Stelzl(3), Huijuan Zhou(3), C. Klingshirn(3), Dagmar Gerthsen(3), J. Konle(3), W. Limmer(3), H. Presting(3), H. Kibbel(3), Jürgen Däubler(2)