G. J. Przybylek

Engineering · Physical Sciences

12h-index415citations28works0.02yr avg
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Research Topics

Semiconductor Lasers and Optical Devices(19), Semiconductor Quantum Structures and Devices(16), Photonic and Optical Devices(15), Optical Network Technologies(7), Advanced Photonic Communication Systems(4)

Publications28 total

Improved contact resistance and linearity in optoelectronic devices with an intermediate quaternary layer
Journal of Applied Physics·2004
40 Gb/s tandem electro-absorption modulator
2002· 16 cited
40-Gb/s tandem electroabsorption modulator
IEEE Photonics Technology Letters·2002· 58 cited
<title>40-Gb/s electroabsorption-modulated NRZ and RZ sources</title>
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2001
Fully stabilized electroabsorption-modulated tunable DBR laser transmitter for long-haul optical communications
IEEE Journal of Selected Topics in Quantum Electronics·2001· 36 cited
High frequency electrical crosstalk in monolithically integrated EA-moduiated tunable DBR lasers
Integrated Photonics Research·2000· 2 cited
Monolithically integrated semiconductor optical amplifier and electroabsorption modulator with dual-waveguide spot-size converter input
IEEE Journal of Selected Topics in Quantum Electronics·2000· 48 cited
A study of optical beat interference between Fabry-Perot lasers
IEEE Photonics Technology Letters·1998· 11 cited
<title>High-power, high-efficiency, and highly uniform 1.3-um uncooled InGaAsP/InP strained multiquantum-well lasers</title>
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1996
Batch fabrication and structure of integrated GaAs-Al/sub x/Ga/sub 1-x/As field-effect transistor-self-electro-optic effect devices (FET-SEED's)
IEEE Electron Device Letters·1992· 12 cited
Ambipolar lifetimes in GaAs/AlGaAs self-electro-optic-effect devices
Applied Physics Letters·1992· 2 cited
Operation of a fully integrated GaAs-Al/sub x/Ga/sub 1-x/As FET-SEED: a basic optically addressed integrated circuit
IEEE Photonics Technology Letters·1992· 52 cited
Logic self-electrooptic effect devices: quantum-well optoelectronic multiport logic gates, multiplexers, demultiplexers, and shift registers
IEEE Journal of Quantum Electronics·1992· 21 cited
Subpicojoule diode-clamped symmetric self electro-optic effect devices
Conference on Lasers and Electro-Optics·1992· 1 cited
Self-biased electronics-compatible self-electro-optic effect devices using extremely shallow QWs
Conference on Lasers and Electro-Optics·1992
Diode-clamped symmetric self-electro-optic effect devices with subpicojoule switching energies
Applied Physics Letters·1992· 18 cited
SEED: A Basic Optically Addressed Integrated Circuit
1992
Ion beam milling-induced damage in AlGaAs/GaAs/AlGaAs single quantum well
Electronics Letters·1991· 1 cited
Low-voltage, high-saturation, optically bistable self-electro-optic effect devices using extremely shallow quantum wells
Applied Physics Letters·1991· 49 cited
Uniform 64×1 arrays of individually-addressed vertical cavity top surface emitting lasers
Electronics Letters·1991· 25 cited
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Frequent Co-authors

M. W. Focht(18), G. D. Guth(17), L. E. Smith(17), J. M. Freund(14), L. M. F. Chirovsky(13), K.G. Glogovsky(10), Anthony L. Lentine(9), L.A. D'Asaro(9), R. E. Leibenguth(9), C. L. Reynolds(8), R. E. Leibenguth(8), F.S. Walters(6), L.J.P. Ketelsen(6), M. T. Asom(6), C.W. Lentz(5), J. Geary(5), L. J. Peticolas(5), Mark S. Hybertsen(5), V. Swaminathan(4), A. Ougazzaden(3)