Yoshiki Sakuma

National Institute for Materials Science — Japan

Physics and Astronomy · Physical Sciences

29h-index3.1kcitations238works1.52yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(146), Semiconductor Lasers and Optical Devices(55), Semiconductor materials and devices(41), Quantum Dots Synthesis And Properties(38), Advanced Semiconductor Detectors and Materials(36)

Publications238 total

Highly Oriented Epitaxial Hexagonal Boron Nitride Multilayers on High‐Temperature‐Resistant Single‐Crystal Aluminum Nitride (0001)
Advanced Science·2025· 1 citedOpen Access
Elucidation of Hidden Grain-Boundary Effects in MOCVD MoS<sub>2</sub> Films via Single-Grain device and ultra-short channel TLM
2025
Self-aligned and self-limiting van der Waals epitaxy of monolayer MoS2 to annihilate grain boundaries for scalable 2D electronics
2025· 1 citedOpen Access
Unveiling Twist Domains in Monolayer MoS <sub>2</sub> through 4D‐STEM and Unsupervised Machine Learning
Small Methods·2025· 2 citedOpen Access
1D Crystallographic Etching of Few‐Layer WS<sub>2</sub>
Advanced Functional Materials·2024· 4 citedOpen Access
Thermal-activation-type Electron Transport Behavior in MOCVD MoS&lt;sub&gt;2&lt;/sub&gt; Film
2024
Why does everyone transfer MoS&lt;sub&gt;2&lt;/sub&gt; grown on sapphire to a Si substrate?-Interaction between MoS&lt;sub&gt;2&lt;/sub&gt;/sapphire-
2024
2D‐Material‐Fused High‐Emittance Plasmo–Photonic Metasurfaces
Advanced Optical Materials·2024· 4 citedOpen Access
Prominently enhanced luminescence from a continuous monolayer of transition metal dichalcogenide on all-dielectric metasurfaces
Nanophotonics·2023· 8 citedOpen Access
One-Dimensional Crystallographic Etching of Few-Layer WS$_2$
arXiv (Cornell University)·2023Open Access
Conduction characteristics of n-InAs/n-GaAs heterojunctions with misfit dislocations
Japanese Journal of Applied Physics·2023· 1 cited
Scalable growth of atomically thin MoS2 layers in a conventional MOCVD system using molybdenum dichloride dioxide as the molybdenum source
Applied Surface Science·2023· 13 cited
Low Dark Current Operation in InAs/GaAs(111)A Infrared Photodetectors: Role of Misfit Dislocations at the Interface
ACS Applied Materials & Interfaces·2023· 14 cited
Scalable Growth of Atomically Thin Mos2 Layers In a Conventional Mocvd System Using Molybdenum Dichloride Dioxide as the Molybdenum Source
SSRN Electronic Journal·2023Open Access
Highly Efficient Deposition of Centimeter‐Scale MoS<sub>2</sub> Monolayer Film on Dragontrail Glass with Large Single‐Crystalline Domains
Small Methods·2022· 9 cited
Oxide Scale Sublimation Chemical Vapor Deposition for Controllable Growth of Monolayer MoS<sub>2</sub> Crystals
Small Methods·2021· 13 cited
Mixed-Salt Enhanced Chemical Vapor Deposition of Two-Dimensional Transition Metal Dichalcogenides
Chemistry of Materials·2021· 53 citedOpen Access
Chemical Vapor Deposition: Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two‐Dimensional Electronics (Adv. Sci. 11/2021)
Advanced Science·2021· 5 citedOpen Access
Annealing-Induced Structural Evolution of InAs Quantum Dots on InP (111)A Formed by Droplet Epitaxy
Crystal Growth & Design·2021· 4 cited
Two-Dimensional WSe<sub>2</sub>/MoSe<sub>2</sub> Heterostructures Grown by Molecular-Beam Epitaxy
The Journal of Physical Chemistry C·2021· 35 cited
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Frequent Co-authors

Naoki Yokoyama(13), Takaaki Mano(13), Kazuaki Sakoda(11), Tatsuya Usuki(10), Shinichi Hirose(9), Takashi Kuroda(8), Akihiro Ohtake(8), Motomu Takatsu(7), Kazuya Takemoto(6), Yasuhiko Arakawa(6), Neul Ha(6), Takeshi Noda(6), Toshiyuki Miyazawa(5), Masafumi Jo(5), Kazuhiro Takemoto(5), K. Kodama(5), H. Nakajima(3), Shisheng Li(3), Yung‐Chang Lin(3), Song Liu(3)