A. J. SpringThorpe

National Research Council Canada — Canada

Physics and Astronomy · Physical Sciences

28h-index2.7kcitations180works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(98), Photonic and Optical Devices(61), Semiconductor Lasers and Optical Devices(59), Semiconductor materials and devices(25), Advanced Semiconductor Detectors and Materials(24)

Publications180 total

Extended Temperature Modeling of InGaAs/InP SPADs
2023Open Access
Zn diffusion depth effect on photoresponse uniformity in InP/InGaAs avalanche photodiodes
Optical and Quantum Electronics·2022· 1 citedOpen Access
Guard-Ring-Free InGaAs/InP Single-Photon Avalanche Diode Based on a Novel One-Step Zn-Diffusion Technique
IEEE Journal of Selected Topics in Quantum Electronics·2022· 23 citedOpen Access
Low Leakage Current Mesa-type Avalanche Photodiodes with Zn-diffused Sidewall
2020
Dopant Depth Distribution Effects on the Gain Profile of Avalanche Photodiodes Fabricated by Zn Diffusion
OSA Advanced Photonics Congress (AP) 2020 (IPR, NP, NOMA, Networks, PVLED, PSC, SPPCom, SOF)·2020· 2 cited
Edge Breakdown Suppression of Avalanche Photodiodes Using Zn Diffusion and Selective Area Growth
IEEE Photonics Technology Letters·2019· 5 cited
Planar avalanche photodiodes with edge breakdown suppression using a novel selective area growth based process
Journal of Crystal Growth·2017· 7 cited
Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·2015· 4 citedOpen Access
Hanle measurements of electrodeposited Fe/GaAs spin tunnel contacts
Journal of Applied Physics·2014· 2 cited
Optimization of MOCVD-diffused p-InP for planar avalanche photodiodes
Journal of Crystal Growth·2013· 12 cited
MOCVD based zinc diffusion process for planar InP/InGaAs avalanche photodiode fabrication
2012· 3 cited
Multiwafer zinc diffusion in an OMVPE reactor
Journal of Crystal Growth·2011· 13 cited
High-performance 1.52 µm InAs/InP quantum dot distributed feedback laser
Electronics Letters·2011· 20 cited
Narrow linewidth 1.52 µm InAs/InP quantum dot DFB lasers
International Conference on Indium Phosphide and Related Materials·2011
InAs/InP quantum dot laser devices around 1550 nm for fiber communications
2011
Single-mode 1.52 μm InAs/InP quantum dot DFB lasers
2011· 1 cited
Photocurrent spectra of heavily doped terahertz quantum well photodetectors
Applied Physics Letters·2010· 12 cited
Deterministic emitter-cavity coupling using a single-site controlled quantum dot
Physical Review B·2010· 64 citedOpen Access
Study of InGaAs/GaAs quantum dot saturation level for the design of concentrated multi-junction solar cells
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2010
Measurement of high efficiency 1 cm<sup>2</sup> AlGaInP/InGaAs/Ge solar cells with embedded InAs quantum dots at up to 1000 suns continuous concentration
2010· 13 cited
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Frequent Co-authors

Dayan Ban(8), John White(5), Z. R. Wasilewski(5), St. J. Dixon-Warren(5), B. Emmerstorfer(4), P. Mandeville(4), R. W. Streater(4), M. Buchanan(4), G. Pakulski(4), H. C. Liu(3), Philip J. Poole(3), Abdul Majeed(3), Hui Luo(3), R.W. Glew(3), Karin Hinzer(3), E. M. Griswold(3), I. D. Calder(3), C. M. Verber(3), Edward H. Sargent(3), C. J. Miner(3)