Youngboo Moon

Korea Polytechnic University — South Korea

Physics and Astronomy · Physical Sciences

9h-index316citations29works1.22yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(17), GaN-based semiconductor devices and materials(10), ZnO doping and properties(8), Ga2O3 and related materials(7), Semiconductor materials and devices(5)

Publications29 total

Effect of CF4 plasma treatment on β-Ga2O3 (001) substrates for enhanced homoepitaxial growth by MOCVD
Materials Research Bulletin·2025
Crack-free thick α-Ga2O3 films grown on Ni–Pd-CNT nanoalloy masks
Materials Science in Semiconductor Processing·2025
Simultaneous Submicron Temperature Mapping of Substrate and Channel in P-GaN/AlGaN/GaN HEMTs Using Raman Thermometry
Applied Sciences·2025· 1 citedOpen Access
Effect of the Buffer Layers on the Strain Distribution in GaN‐Based Power Transistors using Surface‐Enhanced Raman Spectroscopy
physica status solidi (b)·2025· 1 cited
Crack-Free Thick Α- Ga2o3 Films Grown on Ni–Pd and Carbon-Nanotube-Based Nanoalloy Masks
SSRN Electronic Journal·2025Open Access
Displacement damage effect of proton irradiation on vertical β-Ga2O3 and SiC Schottky barrier diodes (SBDs)
Journal of Science Advanced Materials and Devices·2024· 5 citedOpen Access
Heteroepitaxial Growth of Thick α-Ga<sub>2</sub>O<sub>3</sub> Films on Sapphire Substrates by Flow Modulation Epitaxy with Halide Vapor Phase Epitaxy
Crystal Growth & Design·2023· 10 cited
Depth‐dependent strain distribution in AlGaN‐based deep ultraviolet light‐emitting diodes using surface‐plasmon‐enhanced Raman spectroscopy
Journal of Raman Spectroscopy·2021· 4 cited
Incorporation of air-cavity into sapphire substrate and its effect on GaN growth and optical properties
Journal of Crystal Growth·2015· 29 cited
The role of leaked carriers in reduced LED efficiency
SPIE Newsroom·2012
Degradation mechanism of light‐emitting diodes on patterned sapphire substrate
physica status solidi (a)·2010· 1 citedOpen Access
High-breakdown-voltage InGaN/GaN MQW LED Achieved by Using aVaried-barrier-growth-temperature Method
Journal of the Korean Physical Society·2009· 1 cited
Optimization of InGaN/GaN multiple quantum well layers by a two-step varied-barrier-growth temperature method
Semiconductor Science and Technology·2008· 32 cited
The effect of the low-mole InGaN structure and InGaN/GaN strained layer superlattices on optical performance of multiple quantum well active layers
Journal of Crystal Growth·2008· 48 cited
Effect of delayed coalescence of buffer layers on the properties of subsequently grown GaN thin films
Bulletin of the American Physical Society·2007
Photoluminescence characteristics of Cd and Zn diffused layers in InP
2002
Dielectric induced interdiffusion of In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As multiple quantum wells by two step rapid thermal annealing
2002
Observation of As carryover from two different As sources
2002
Quantitative analysis of the arsenic distribution in AsH/sub 3/ treated InAs/sub x/P/sub 1-x//InP single quantum well by grazing incidence X-ray reflectivity and photoluminescence
2002
In situ analysis of surface photoabsorption spectra during InP ALE in metal organic chemical vapor deposition
Microelectronic Engineering·2000· 6 cited
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Frequent Co-authors

Euijoon Yoon(14), Tae-Wan Lee(8), Sukho Yoon(6), Young Dong Kim(5), Heedon Hwang(5), Gieop Lee(4), An‐Na Cha(4), Young Chul Shin(3), Kyeongran Yoo(3), Jun‐Seok Ha(3), Jaesun Kim(3), Shi Jong Leem(2), Eun Hong Kim(2), Tae Geun Kim(2), Chul Min Kim(2), S.S. Cho(2), Jeong Soo Chung(2), Gahyun Choi(2), Seungyoung Lim(2), Jung‐Hoon Song(2)