V. V. Afanas’ev

IMEC — Belgium

Engineering · Physical Sciences

55h-index12.1kcitations444works1.02yr avg
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Research Topics

Semiconductor materials and devices(338), Electronic and Structural Properties of Oxides(104), Semiconductor materials and interfaces(87), Advancements in Semiconductor Devices and Circuit Design(80), Integrated Circuits and Semiconductor Failure Analysis(62)

Publications444 total

Hot-Electrons in Multilayer Graphene Revisited
The Journal of Physical Chemistry C·2025Open Access
Impact of Al-doping on Al:HfO<sub>2</sub>Dielectric Reliability in MIM Capacitors
2025· 1 cited
Investigation of recycling technology for long mandrel bars of a continuous mill
Metallurgist·2025
Implications of side contact depth on the Schottky barrier of 2D field-effect transistors
Journal of Computational Electronics·2024· 1 cited
Improved Capacitive Memory Window for Non-Destructive Read in HZO-Based Ferroelectric Capacitors with Incorporation of Semiconducting IGZO
2024· 3 cited
Pulse-Based Capacitive Memory Window with High Non-Destructive Read Endurance in Fully BEOL Compatible Ferroelectric Capacitors
2023· 28 cited
Scanning tunneling microscopy for imaging and quantification of defects in as-deposited MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si12.svg" display="inline" id="d1e247"><mml:msub><mml:mrow/><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:math> monolayers on sapphire substrates
Solid-State Electronics·2023· 2 citedOpen Access
Impact of CVD chemistry on band alignment at the MoS2/SiO2 interface
Solid-State Electronics·2023· 6 cited
Experimental Study Of Interface &amp; Bulk Defectivity In Ultra-Thin BEOL Dielectrics By Using Low Frequency Noise Spectroscopy
2023· 2 citedOpen Access
Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs
2023· 3 cited
Deep electron traps in HfO2-based ferroelectrics: (Al/Si-doped) HfO2 versus HfZrO4
Solid-State Electronics·2022· 6 cited
CeO<sub>2</sub>-Doped Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Ferroelectrics for High Endurance Embedded Memory Applications
2022
Understanding and modelling the PBTI reliability of thin-film IGZO transistors
2021 IEEE International Electron Devices Meeting (IEDM)·2021· 65 cited
Low-temperature atomic and molecular hydrogen anneals for enhanced chemical $\mathbf{SiO}_{2}$ IL quality in low thermal budget RMG stacks
2021 IEEE International Electron Devices Meeting (IEDM)·2021· 9 cited
Structural and electronic rearrangement in ovonic switching GexSe1-x(0,4 ≤ x ≤ 0,72) films
Solid-State Electronics·2021· 2 cited
Electron trapping in ferroelectric HfZrO4 and Al- and Si-doped layers
Solid-State Electronics·2021Open Access
Shallow electron traps in high-k insulating oxides
Solid-State Electronics·2021· 2 citedOpen Access
Optical transitions in monolayer WS2 observed through transient photoconductivity in MIS structures
Solid-State Electronics·2021
Processing Stability of Monolayer WS<sub>2</sub> on SiO<sub>2</sub>
Nano Express·2021· 6 citedOpen Access
Threshold switching in a-Si and a-Ge based MSM selectors and its implications for device reliability
2021· 3 cited
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Frequent Co-authors

A. Stesmans(29), Michel Houssa(11), Geoffrey Pourtois(9), Emilio Scalise(7), Gerhard Pensl(5), A. Stesmans(4), M. M. Heyns(4), Bas van den Broek(4), Darrell G. Schlom(4), A. Stesmans(4), Al-Moatasem El-Sayed(4), M. Baßler(3), Chao Zhao(3), Matty Caymax(3), T. Heeg(3), J. Schubert(3), Alexander L. Shluger(3), Tibor Grasser(3), Karl Opsomer(2), B. Kaczer(2)