Dong Zhi

Physics and Astronomy · Physical Sciences

13h-index508citations39works0.02yr avg
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Research Topics

Semiconductor materials and interfaces(22), Semiconductor materials and devices(21), Advancements in Semiconductor Devices and Circuit Design(13), Silicon Carbide Semiconductor Technologies(5), Molecular Sensors and Ion Detection(4)

Publications39 total

The application of advanced TEM techniques to the characterisation of an asymmetric spacer layer tunnel diode
2018
Tuning Contact Barrier Height between Metals and MoS<sub>2</sub> Monolayer through Interface Engineering
Advanced Materials Interfaces·2017· 21 cited
The stability of aluminium oxide monolayer and its interface with two-dimensional materials
Scientific Reports·2016· 96 citedOpen Access
Interfacial Interaction between HfO<sub>2</sub> and MoS<sub>2</sub>: From Thin Films to Monolayer
The Journal of Physical Chemistry C·2016· 33 cited
High voltage AlGaN/GaN metal–oxide–semiconductor high-electron mobility transistors with regrown In<sub>0.14</sub>Ga<sub>0.86</sub>N contact using a CMOS compatible gold-free process
Applied Physics Express·2014· 6 cited
CCDC 981678: Experimental Crystal Structure Determination
The Cambridge Structural Database·2014Open Access
AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors with a High Breakdown Voltage of 1400 V and a Complementary Metal–Oxide–Semiconductor Compatible Gold-Free Process
Japanese Journal of Applied Physics·2013· 16 cited
NiSi2 formation through annealing of nickel and dysprosium stack on Si(100) and impact on effective Schottky barrier height
Journal of Applied Physics·2013· 4 cited
Fermi-level depinning at the metal-germanium interface by the formation of epitaxial nickel digermanide NiGe2 using pulsed laser anneal
Applied Physics Letters·2012· 18 citedOpen Access
Modulation of effective Schottky barrier height of nickel silicide on silicon using pre-silicide ammonium sulfide treatment
Journal of Applied Physics·2012· 12 cited
Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping
Nanoscale Research Letters·2012· 14 citedOpen Access
Recognition and sensing of anions through synergistic effects using simple benzimidazolium-urea receptors
科学通报(英文版)·2012
Ionic liquids containing the urea moiety for recognition of halides and complex anions
科学通报(英文版)·2012
Synthesis of Benzimidazolium-urea Receptors and Their Anion Recognition Properties
Gaodeng xuexiao huaxue xuebao·2012
Imidazolium and Pyridinium Based Receptors for Anion Recognition and Sensing
Gaodeng xuexiao huaxue xuebao·2011
Formation of epitaxial metastable NiGe2 thin film on Ge(100) by pulsed excimer laser anneal
Applied Physics Letters·2010· 23 cited
Sputter-Deposited ZrO&lt;sub&gt;2&lt;/sub&gt; Gate Dielectric on High Mobility Epitaxial-GaAs/Ge Channel Material for Advanced CMOS Applications
Key engineering materials·2010
The Role of Carbon and Dysprosium in Ni[Dy]Si:C Contacts for Schottky-Barrier Height Reduction and Application in N-Channel MOSFETs With Si:C Source/Drain Stressors
IEEE Transactions on Electron Devices·2009· 9 cited
Dopant Segregated Schottky (DSS) Source/Drain for Germanium p-MOSFETs with Metal Gate/High-k Dielectric Stack
ECS Transactions·2009· 1 cited
Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films
Journal of Applied Physics·2009· 5 cited
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Frequent Co-authors

Yee‐Chia Yeo(14), Phyllis Shi Ya Lim(7), Tsung-Yang Liow(6), Kian-Ming Tan(5), Rinus T. P. Lee(4), Guo‐Qiang Lo(4), Ming Yang(3), Jian Chai(3), Martin Callsen(3), Jun Zhou(3), Tong Yang(3), Ji Sheng Pan(3), Yuan Ping Feng(3), Shijie Wang(3), Andy Eu-Jin Lim(3), Ganesh S. Samudra(3), K. L. Pey(3), Ghim Wei Ho(3), Zheng Zhang(2), Keat Mun Hoe(2)