Xuemei Xi

China Pharmaceutical University — China

Engineering · Physical Sciences

11h-index565citations57works0.02yr avg
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Research Topics

Advancements in Semiconductor Devices and Circuit Design(43), Semiconductor materials and devices(42), Silicon Carbide Semiconductor Technologies(28), Integrated Circuits and Semiconductor Failure Analysis(8), Radio Frequency Integrated Circuit Design(6)

Publications57 total

PCR106 Willingness To Pay for Temporary Alleviation of Anemia Status Transfusion-Dependent Beta-Thalassemia Patients in China
Value in Health·2024
Upregulation of circFOXP1 attenuates inflammation and apoptosis induced by ox-LDL in human umbilical vein endothelial cells by regulating the miR-185-5p/BCL-2 axis
Canadian Journal of Physiology and Pharmacology·2022· 7 citedOpen Access
Effect of Plasma Heating on the Molten Steel in Tundish
2019· 2 cited
An Accurate and Robust Compact Model for High-Voltage MOS IC Simulation
IEEE Transactions on Electron Devices·2013· 15 cited
Linearly graded doping drift region: a novel lateral voltage-sustaining layer used for improvement of RESURF LDMOS transistor performancess
Semiconductor Science and Technology·2010
Retraction notice to “Normalized mutual integral difference operator: A novel experimental method for extracting threshold voltage of MOSFETs” [Microelectron. J. 33 (2002) 667–670]
Microelectronics Journal·2010
BSIM5: An advanced charge-based MOSFET model for nanoscale VLSI circuit simulation
Solid-State Electronics·2007· 30 cited
BSIM4 and BSIM Multi-Gate Progress
2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings·2006· 9 cited
Dynamic Behavior Model for High-k MOSFETs
2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings·2006· 2 cited
On gate leakage current partition for MOSFET compact model
Solid-State Electronics·2006· 3 cited
Modeling Advanced FET Technology in a Compact Model
IEEE Transactions on Electron Devices·2006· 94 cited
Compact modeling of finfets featuring independent-gate operation mode
2005· 10 cited
Next generation CMOS compact models for RF and microwave applications
2005· 8 cited
BSIM5 MOSFET model
2005· 18 cited
Challenges in Compact Modeling for RF and Microwave Applications
TechConnect Briefs·2005
The next generation BSIM for sub-100nm mixed-signal circuit simulation
2004· 2 cited
An exact analytic model of undoped body MOSFETs using the SPP approach
Rare & Special e-Zone (The Hong Kong University of Science and Technology)·2004
Quasi-2D Compact Modeling for Double-Gate MOSFET
Rare & Special e-Zone (The Hong Kong University of Science and Technology)·2004· 6 cited
Linear cofactor difference extrema of MOSFET's drain current and their application in parameter extraction
Rare & Special e-Zone (The Hong Kong University of Science and Technology)·2004
The development of the next generation BSIM for sub-100nm mixed-signal circuit simulation
Rare & Special e-Zone (The Hong Kong University of Science and Technology)·2004· 6 cited
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Frequent Co-authors

Mansun Chan(26), Jin He(24), Ali M. Niknejad(21), Yangyuan Wang(19), Chenming Hu(17), Mohan V. Dunga(13), Hui Wan(7), Xing Zhang(7), Xing Zhang(6), Chenming Hu(5), Kanyu Cao(5), Yingxue Li(5), Chung-Hsun Lin(5), Hongmei Wang(5), C.-H. Lin(4), Ru Huang(4), Babak Heydari(4), P.K. Ko(4), Chenming Hu(3), Chung Hsun Lin(3)