S. Porwal

Physics and Astronomy · Physical Sciences

16h-index711citations73works1.82yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(43), Quantum and electron transport phenomena(17), GaN-based semiconductor devices and materials(15), Advanced Semiconductor Detectors and Materials(15), Ga2O3 and related materials(15)

Publications73 total

Unlocking the Talent Acquisition Potential
2025
Non-unitary time dynamics of topological modes in open planar quantum systems
ArXiv.org·2025Open Access
Enhancing Patient Access and Security: Blockchain-QR Integrated Hospital on Tap System
Lecture notes in networks and systems·2025
Effect of cap layer and post growth on-site hydride passivation on the surface and interface quality of InAsP/InP hetero and QW structures
Surfaces and Interfaces·2024· 2 cited
Impact of oxygen plasma power on the performance of Ga2O3 passivated GaN ultraviolet photodetectors
Applied Surface Science·2024· 7 cited
Electric Vehicle Control Scheme for V2G and G2V Mode of Operation Using PI/Fuzzy-Based Controller
Lecture notes in networks and systems·2023
Influence of interface states on built-in electric field and diamagnetic-Landau energy shifts in asymmetric modulation-doped InGaAs/GaAs QWs
Journal of Physics D Applied Physics·2022· 7 cited
Role of threading dislocations and point defects in the performance of GaN-based metal-semiconductor-metal ultraviolet photodetectors
Superlattices and Microstructures·2020· 18 cited
Optimization of the growth of GaN epitaxial layers in an indigenously developed MOVPE system
Sadhana·2020· 5 cited
Electric and magnetic field effects on the exciton localization in a modulation doped InGaAs/GaAs quantum well
AIP conference proceedings·2020· 1 cited
Simultaneous magneto-electro-optical measurements in modulation-doped quantum well: An investigation on magneto-photoluminescence intensity oscillations
Journal of Applied Physics·2019· 1 cited
Detection of optically injected spin polarized electrons in the L-valley of AlGaAs through polarization resolved photoluminescence excitation spectroscopy
Journal of Luminescence·2019· 6 cited
Development of a simple cost-effective maskless-photolithography system
AIP conference proceedings·2019· 9 cited
Impact of post deposition annealing of ZrO<sub>2</sub> insulating layer on the performance of GaN metal-semiconductor-metal ultraviolet photodetectors
2018
A parallel magnetic field driven confinement versus separation of charges in GaAs quantum well investigated by magneto-photovoltage and magneto-photoluminescence spectroscopy
Journal of Luminescence·2018· 3 cited
Peculiarities of the current-voltage and capacitance-voltage characteristics of plasma etched GaN and their relevance to n-GaN Schottky photodetectors
Journal of Applied Physics·2018· 14 cited
Temperature dependent spin Hall conductivity in n-GaAs epitaxial layers measured by inverse spin Hall effect
Journal of Applied Physics·2018· 3 cited
Radiative and non-radiative recombination of thermally activated magneto-excitons probed via quasi-simultaneous photoluminescence and surface-photovoltage spectroscopy
Journal of Applied Physics·2018· 6 cited
Effect of 60Co γ-irradiation on the nature of electronic transport in heavily doped n-type GaN based Schottky photodetectors
Journal of Applied Physics·2018· 15 cited
Identification of the spatial location of deep trap states in AlGaN/GaN heterostructures by surface photovoltage spectroscopy
Superlattices and Microstructures·2017· 3 cited
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Frequent Co-authors

T. K. Sharma(37), S. M. Oak(24), V. K. Dixit(23), S. D. Singh(17), Tapas Ganguli(15), Ravi Kumar(13), Shailesh K. Khamari(11), Pragya Tiwari(10), Geetanjali Vashisht(8), Ravindra Jangir(6), Subhomoy Haldar(6), Arvind K. Srivastava(5), Abhishek Chatterjee(5), Puspen Mondal(4), A. Bose(4), Suparna Pal(4), Alka Ingale(3), Sanjay Kher(3), Shailendra Kumar(3), Ashish Kumar Nath(3)