L. C. Jenkins

University of Nottingham — United Kingdom

Physics and Astronomy · Physical Sciences

13h-index707citations37works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(18), Semiconductor Quantum Structures and Devices(13), Semiconductor materials and devices(9), Crystallization and Solubility Studies(6), X-ray Diffraction in Crystallography(6)

Publications37 total

Catalytic Dinitrogen Reduction to Ammonia at a Triamidoamine–Titanium Complex
Angewandte Chemie International Edition·2018· 140 citedOpen Access
Catalytic Dinitrogen Reduction to Ammonia at a Triamidoamine–Titanium Complex
Angewandte Chemie·2018· 33 citedOpen Access
CCDC 1812645: Experimental Crystal Structure Determination
The Cambridge Structural Database·2018Open Access
CCDC 1812647: Experimental Crystal Structure Determination
The Cambridge Structural Database·2018Open Access
CCDC 1812644: Experimental Crystal Structure Determination
The Cambridge Structural Database·2018Open Access
CCDC 1812642: Experimental Crystal Structure Determination
The Cambridge Structural Database·2018Open Access
CCDC 1812643: Experimental Crystal Structure Determination
The Cambridge Structural Database·2018Open Access
CCDC 1812646: Experimental Crystal Structure Determination
The Cambridge Structural Database·2018Open Access
Characterization of TFT/LCD arrays
2002· 7 cited
Schottky contacts to InP, InGaAs and InAlAs
2002
Next Generation TFT‐Array Testing for High Resolution/High Content AMLCDs
SID Symposium Digest of Technical Papers·1999· 6 cited
A 10.5-in.-diagonal SXGA active-matrix display
IBM Journal of Research and Development·1998· 20 cited
High Conductivity Gate Metallurgy for TFT/LCD's
MRS Proceedings·1998· 4 cited
High Conductivity Gate Metallurgy for Tft/Lcd's
MRS Proceedings·1998
A six‐mask TFT‐LCD process using copper‐gate metallurgy
Journal of the Society for Information Display·1997· 16 cited
Photoluminescence study of silicon-doped GaN grown by MBE on GaAs substrates
Solid-State Electronics·1997· 4 cited
Optical properties of doped GaN grown by a modified molecular beam epitaxial (MBE) process on GaAs substrates
Journal of Crystal Growth·1996· 8 cited
Molecular beam epitaxy growth kinetics for group III nitrides
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·1996· 13 cited
Secondary-ion mass spectroscopy (SIMS) investigations of Be and Si incorporation in GaN grown by molecular beam epitaxy (MBE)
Semiconductor Science and Technology·1996· 11 cited
Far infrared spectroscopy of thin epitaxial layers of GaN deposited by molecular beam epitaxy on GaP substrates
Infrared Physics & Technology·1996· 11 cited
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Frequent Co-authors

S. E. Hooper(16), John Orton(15), C. T. Foxon(15), T.S. Cheng(12), D. E. Lacklison(11), С. В. Новиков(9), Laurence R. Doyle(8), Ashley J. Wooles(8), Floriana Tuna(8), Eric J. L. McInnes(8), Stephen T. Liddle(8), R. Polastre(7), R. Wisnieff(6), Frank Libsch(5), V. V. Tret’yakov(4), E. G. Colgan(4), P. M. Fryer(4), E. Galligan(4), R. Horton(4), R. John(4)