S. E. Hooper

Oxford Photovoltaics (United Kingdom) — United Kingdom

Physics and Astronomy · Physical Sciences

17h-index1.0kcitations62works3.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(50), Semiconductor Quantum Structures and Devices(47), Ga2O3 and related materials(15), Semiconductor materials and devices(14), Metal and Thin Film Mechanics(11)

Publications62 total

Quantifying the rear side contribution in bifacial tandem-photovoltaic devices
EES solar.·2024· 3 citedOpen Access
Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes
Journal of Physics Conference Series·2014Open Access
Synthesis of widely tunable and highly luminescent zinc nitride nanocrystals
Journal of Materials Chemistry C·2014· 21 cited
Atom probe tomography characterisation of a laser diode structure grown by molecular beam epitaxy
Journal of Applied Physics·2012· 14 citedOpen Access
Role of radiative recombination in 1 eV GaInNAs solar cells
Bulletin of the American Physical Society·2012
Wide depletion width of 1 eV GaInNAs solar cells by thermal annealing
Applied Physics Letters·2011· 18 cited
Electrical control of the exciton spin in nitride semiconductor quantum dots
Applied Physics Letters·2009· 5 cited
Performance and degradation characteristics of blue–violet laser diodes grown by molecular beam epitaxy
physica status solidi (a)·2009· 4 cited
Degradation of InGaN∕GaN laser diodes analyzed by microphotoluminescence and microelectroluminescence mappings
Applied Physics Letters·2008· 28 cited
Degradation of III‐nitride laser diodes grown by molecular beam epitaxy
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2008· 6 citedOpen Access
High-power and long-lifetime InGaN blue–violet laser diodes grown by molecular beam epitaxy
Electronics Letters·2008· 9 cited
Strong carrier confinement and negligible piezoelectric effect in InGaN/GaN quantum dots
Physica E Low-dimensional Systems and Nanostructures·2007· 6 cited
Erratum: Strong carrier confinement in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi mathvariant="normal">In</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:msub><mml:mi mathvariant="normal">Ga</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:mi mathvariant="normal">N</mml:mi><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">Ga</mml:mi><mml:mi mathvariant="normal">N</mml:mi></mml:mrow></mml:math>quantum dots grown by molecular beam epitaxy [Phys. Rev. B<b>75</b>, 045314 (2007)]
Physical Review B·2007· 4 citedOpen Access
Long lifetime cw InGaN laser diodes by molecular beam epitaxy
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2007
Strong carrier confinement in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi mathvariant="normal">In</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:msub><mml:mi mathvariant="normal">Ga</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:mi mathvariant="normal">N</mml:mi><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">Ga</mml:mi><mml:mi mathvariant="normal">N</mml:mi></mml:mrow></mml:math>quantum dots grown by molecular beam epitaxy
Physical Review B·2007· 34 cited
Nitrides optoelectronic devices grown by molecular beam epitaxy
physica status solidi (a)·2006· 16 cited
Molecular beam epitaxy for high‐efficiency nitride optoelectronics
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2006· 2 cited
Characteristics of CW violet laser diodes grown by MBE
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2006· 2 cited
Atomic force microscopy analysis of cleaved facets in III-nitride laser diodes grown on free-standing GaN substrates
Applied Physics Letters·2006· 6 cited
The Structural and Optical Properties of Self-assembled InGaN/GaN Quantum Dots Grown by Molecular Beam Epitaxy
MRS Proceedings·2006· 1 cited
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Frequent Co-authors

John Orton(21), C. T. Foxon(20), Jon Heffernan(18), T.S. Cheng(17), M. Kauer(17), D. E. Lacklison(15), L. C. Jenkins(14), V. Bousquet(13), T. M. Smeeton(12), С. В. Новиков(10), Kelsey E. Johnson(7), A. V. Andrianov(6), Christoph Zellweger(6), D J Dewsnip(5), J. Barnes(5), W. S. Tan(5), C. J. Humphreys(5), Guanzhou Ren(4), M. Sénès(4), Katherine L. Smith(4)