J. Barnes

Physics and Astronomy · Physical Sciences

14h-index571citations27works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(23), GaN-based semiconductor devices and materials(7), solar cell performance optimization(6), Nanowire Synthesis and Applications(5), Spectroscopy and Laser Applications(4)

Publications27 total

Differences in Reasons for Living in College Methamphetamine Users and Non-Users
College student journal·2016· 1 cited
High-power and long-lifetime InGaN blue–violet laser diodes grown by molecular beam epitaxy
Electronics Letters·2008· 9 cited
Long lifetime cw InGaN laser diodes by molecular beam epitaxy
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2007
Nitrides optoelectronic devices grown by molecular beam epitaxy
physica status solidi (a)·2006· 16 cited
Molecular beam epitaxy for high‐efficiency nitride optoelectronics
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2006· 2 cited
Characteristics of CW violet laser diodes grown by MBE
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2006· 2 cited
Continuous-wave operation of InGaN multiple quantum well laser diodes grown by molecular beam epitaxy
Electronics Letters·2005· 27 cited
InGaN multiple quantum well laser diodes grown by molecular beam epitaxy
Electronics Letters·2004· 46 cited
Phenomenological Intentionality meets an Ego-less State
Indo-Pacific Journal of Phenomenology·2003· 21 citedOpen Access
Voltage performance of quantum well solar cells in the Al/sub x/Ga/sub 1-x/As/GaAs and the GaAs/In/sub y/Ga/sub 1-y/As material systems
2002· 7 cited
Reduced radiative currents from GaAs/InGaAs and AlGaAs/GaAs p-i-n quantum well devices
2002
GaAs/AlGaAs single quantum well p-i-n structures: A surface photovoltage study
Journal of Applied Physics·1999· 11 cited
Space charge effects in carrier escape from single quantum well structures
Journal of Applied Physics·1999· 27 cited
The Effect of the Buffer Layer on the Structure, Mobility and Photoluminescence of MBE grown GaN
MRS Proceedings·1999· 1 cited
Radiative currents in quantum-well solar cells
Physica E Low-dimensional Systems and Nanostructures·1998· 9 cited
A carrier escape study from InP/InGaAs single quantum well solar cells
Journal of Applied Physics·1998· 25 cited
Observation of suppressed radiative recombination in single quantum well p-i-n photodiodes
Journal of Applied Physics·1997· 83 cited
Quantum well solar cells
Applied Surface Science·1997· 110 cited
Steady state photocurrent and photoluminescence from single quantum wells as a function of temperature and bias
Journal of Applied Physics·1997· 30 cited
Tailored carrier escape rates in asymmetric double quantum wells
Semiconductor Science and Technology·1997· 13 cited
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Frequent Co-authors

K.W.J. Barnham(17), Jenny Nelson(10), E. S. M. Tsui(10), J.S. Roberts(8), S. E. Hooper(8), Jon Heffernan(8), M. Kauer(7), V. Bousquet(6), Benjamin Kluftinger(5), T.S. Cheng(5), Nicholas J. Ekins‐Daukes(4), Guido Haarpaintner(4), M.A. Pate(4), J. Windle(4), Paul Griffin(3), C.T. Foxon(3), M. Mazzer(3), R. Grey(3), Chris Button(3), T. M. Smeeton(3)